Details
| Original language | English |
|---|---|
| Pages (from-to) | 2161-2165 |
| Number of pages | 5 |
| Journal | Solid-State Electronics |
| Volume | 47 |
| Issue number | 12 |
| Early online date | 27 Jun 2003 |
| Publication status | Published - Dec 2003 |
Abstract
We show results for molecular beam epitaxial growth of praseodymium oxide on Si. On Si(1 0 0) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(1 1 1). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(0 0 1) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(0 0 1) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Solid-State Electronics, Vol. 47, No. 12, 12.2003, p. 2161-2165.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial praseodymium oxide
T2 - a new high-K dielectric
AU - Osten, H. J.
AU - Bugiel, E.
AU - Fissel, A.
N1 - Funding Information: This work was partly funded by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D). Part of the work has been realized during our stay at IHP in Frankfurt (Oder), Germany. The authors would like to thank various members of IHP for their contributions as well as for stimulating discussions.
PY - 2003/12
Y1 - 2003/12
N2 - We show results for molecular beam epitaxial growth of praseodymium oxide on Si. On Si(1 0 0) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(1 1 1). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(0 0 1) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(0 0 1) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
AB - We show results for molecular beam epitaxial growth of praseodymium oxide on Si. On Si(1 0 0) oriented surfaces, crystalline Pr2O3 grows as (1 1 0)-domains, with two orthogonal in-plane orientations. Epitaxial overgrowth with Si could not been realized so far. We obtain perfect epitaxial growth of hexagonal Pr2O3 on Si(1 1 1). These layers can also be overgrown epitaxially with Si leading to novel tunnel structures. Crystalline Pr2O3 on Si(0 0 1) is a promising candidate for highly scaled gate insulators, displaying sufficiently high-K value of around 30, ultra-low leakage current density, good reliability, and high electrical breakdown voltage. The Pr2O3/Si(0 0 1) interface exhibits the symmetric band alignment, desired for applying such material in both n- and p-type devices. The valence band as well as the conduction band offset to Si is above 1 eV. The electron masses can be assumed to be very heavy in the oxide. This effect together with the suitable band offsets leads to the unusually low leakage currents found experimentally. Finally, the integration of crystalline Pr2O3 high-K gate dielectrics into a conventional CMOS process will be demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=0142075252&partnerID=8YFLogxK
U2 - 10.1016/S0038-1101(03)00190-4
DO - 10.1016/S0038-1101(03)00190-4
M3 - Article
AN - SCOPUS:0142075252
VL - 47
SP - 2161
EP - 2165
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 12
ER -