Epitaxial oxides on silicon for CMOS and Beyond

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  • H. J. Osten
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Details

Original languageEnglish
Pages (from-to)109-116
Number of pages8
JournalECS Transactions
Volume75
Issue number13
Publication statusPublished - 2016
EventSymposium on Emerging Nanomaterials and Devices - PRiME 2016/230th ECS Meeting - Honolulu, United States
Duration: 2 Oct 20167 Oct 2016

Abstract

A very promising way to realize advanced future devices is using single-crystalline, closely lattice matched oxides, which will be grown epitaxially on the substrate of choice. We present results for crystalline gadolinium oxides on silicon grown by solid source molecular beam epitaxy. The dielectric properties of such oxides are sensitive to small variations in structure and symmetry. For example, thin crystalline Gd2O3 films epitaxially grown on silicon exhibit dielectric constants above 20 although the known bulk value is only around 14. The reason for that "enhancement effect" is not fully understood yet. Here, we report about different investigations on strain-induced effects on dielectric properties. We explain these effects by severe strain induced structural phase deformations. Further, dielectric properties of epitaxial oxide thin films have been found to improve significantly by incorporation of suitable dopants. To achieve optimum electrical properties from such doped oxides it is important to understand the correlation between doping and the electronic structure of the material. Finally, we will demonstrate different approaches to grow Si nanostructures embedded into crystalline rare earth oxides. By efficiently exploiting the growth kinetics one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the carriers are confined in only one of the dimensions.

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Epitaxial oxides on silicon for CMOS and Beyond. / Osten, H. J.
In: ECS Transactions, Vol. 75, No. 13, 2016, p. 109-116.

Research output: Contribution to journalArticleResearchpeer review

Osten, HJ 2016, 'Epitaxial oxides on silicon for CMOS and Beyond', ECS Transactions, vol. 75, no. 13, pp. 109-116. https://doi.org/10.1149/07513.0109ecst
Osten, H. J. (2016). Epitaxial oxides on silicon for CMOS and Beyond. ECS Transactions, 75(13), 109-116. https://doi.org/10.1149/07513.0109ecst
Osten HJ. Epitaxial oxides on silicon for CMOS and Beyond. ECS Transactions. 2016;75(13):109-116. doi: 10.1149/07513.0109ecst
Osten, H. J. / Epitaxial oxides on silicon for CMOS and Beyond. In: ECS Transactions. 2016 ; Vol. 75, No. 13. pp. 109-116.
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