Details
| Original language | English |
|---|---|
| Pages (from-to) | 866-868 |
| Number of pages | 3 |
| Journal | Materials letters |
| Volume | 64 |
| Issue number | 7 |
| Early online date | 20 Jan 2010 |
| Publication status | Published - 15 Apr 2010 |
Abstract
New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
Keywords
- Crystal growth, Electronic materials, Nanomaterials, Thin films, X-ray techniques
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials letters, Vol. 64, No. 7, 15.04.2010, p. 866-868.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial multi-component rare-earth oxide
T2 - A high-k material with ultralow mismatch to Si
AU - Wang, Jinxing
AU - Liu, Tianmo
AU - Wang, Zhongchang
AU - Bugiel, Eberhard
AU - Laha, Apurba
AU - Watahiki, Tatsuro
AU - Shayduk, Roman
AU - Braun, Wolfgang
AU - Fissel, Andreas
AU - Osten, Hans Jörg
N1 - Funding Information: This work was supported in part by the German Federal Ministry of Education and Research under the MEGAEPOS project. J. Wang acknowledges the Chinese Scholarship Council project for scholarship support ( LJC20093012 ).
PY - 2010/4/15
Y1 - 2010/4/15
N2 - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
AB - New gate dielectric substitute for high-k application requires well matched lattice parameters and an atomically defined interface with Si for optimal performance. Using molecular beam epitaxy technique, we have grown on Si(111) crystalline rare-earth oxide ultrathin films, (GdxNd1 - x)2O3 (GNO), a multi-component material that is superior to either of its binary host oxides. By carefully characterizing its crystal structure, we have found that the epitaxial GNO film exhibits a single bixbyite cubic structure with ultralow lattice mismatch to Si, which is indistinguishable even by the powerful synchrotron radiation. This structural perfection could make the GNO a promising high-k material in future devices.
KW - Crystal growth
KW - Electronic materials
KW - Nanomaterials
KW - Thin films
KW - X-ray techniques
UR - http://www.scopus.com/inward/record.url?scp=76849112128&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2010.01.045
DO - 10.1016/j.matlet.2010.01.045
M3 - Article
AN - SCOPUS:76849112128
VL - 64
SP - 866
EP - 868
JO - Materials letters
JF - Materials letters
SN - 0167-577X
IS - 7
ER -