Details
| Original language | English |
|---|---|
| Pages (from-to) | 6512-6517 |
| Number of pages | 6 |
| Journal | THIN SOLID FILMS |
| Volume | 515 |
| Issue number | 16 SPEC. ISS. |
| Early online date | 25 Jan 2007 |
| Publication status | Published - 4 Jun 2007 |
Abstract
We studied the growth and electrical properties of single crystalline mixed (Nd1 - xGdx)2O3 (NGO) thin films and compared the results with those of the binary Gd2O3 and Nd2O3 thin films, respectively. Epitaxial ternary NGO thin films were grown on Si(100) substrates using modified solid state molecular beam epitaxy. The films were characterized physically using various techniques. The capacitance equivalent oxide thickness of a 4.5 nm NGO thin film extracted from capacitance-voltage (C-V) characteristics was 0.9 nm, which is lower than all values reported earlier for other crystalline oxides. The leakage current density and the density of interface traps were 0.3 mA/cm2 at |Vg - VFB| = 1 V and 1.4 × 1012/cm2, respectively. These excellent electrical properties of NGO thin films demonstrate that such ternary oxides could be one of the promising candidates for gate dielectrics in the upcoming generations of complementary metal oxide semiconductor (CMOS) devices.
Keywords
- Epitaxy, High-K, MBE, Oxide
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Materials Science(all)
- Surfaces, Coatings and Films
- Materials Science(all)
- Metals and Alloys
- Materials Science(all)
- Materials Chemistry
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In: THIN SOLID FILMS, Vol. 515, No. 16 SPEC. ISS., 04.06.2007, p. 6512-6517.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial multi-component rare earth oxide for high-K application
AU - Laha, Apurba
AU - Fissel, A.
AU - Bugiel, E.
AU - Osten, H. J.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the KrisMOS project (01M3142D). One of the authors (AL) would like to thank the Alexander von Humboldt Foundation for assigning a fellowship. We would also like to thank O. Kirfel for his excellent technical assistance.
PY - 2007/6/4
Y1 - 2007/6/4
N2 - We studied the growth and electrical properties of single crystalline mixed (Nd1 - xGdx)2O3 (NGO) thin films and compared the results with those of the binary Gd2O3 and Nd2O3 thin films, respectively. Epitaxial ternary NGO thin films were grown on Si(100) substrates using modified solid state molecular beam epitaxy. The films were characterized physically using various techniques. The capacitance equivalent oxide thickness of a 4.5 nm NGO thin film extracted from capacitance-voltage (C-V) characteristics was 0.9 nm, which is lower than all values reported earlier for other crystalline oxides. The leakage current density and the density of interface traps were 0.3 mA/cm2 at |Vg - VFB| = 1 V and 1.4 × 1012/cm2, respectively. These excellent electrical properties of NGO thin films demonstrate that such ternary oxides could be one of the promising candidates for gate dielectrics in the upcoming generations of complementary metal oxide semiconductor (CMOS) devices.
AB - We studied the growth and electrical properties of single crystalline mixed (Nd1 - xGdx)2O3 (NGO) thin films and compared the results with those of the binary Gd2O3 and Nd2O3 thin films, respectively. Epitaxial ternary NGO thin films were grown on Si(100) substrates using modified solid state molecular beam epitaxy. The films were characterized physically using various techniques. The capacitance equivalent oxide thickness of a 4.5 nm NGO thin film extracted from capacitance-voltage (C-V) characteristics was 0.9 nm, which is lower than all values reported earlier for other crystalline oxides. The leakage current density and the density of interface traps were 0.3 mA/cm2 at |Vg - VFB| = 1 V and 1.4 × 1012/cm2, respectively. These excellent electrical properties of NGO thin films demonstrate that such ternary oxides could be one of the promising candidates for gate dielectrics in the upcoming generations of complementary metal oxide semiconductor (CMOS) devices.
KW - Epitaxy
KW - High-K
KW - MBE
KW - Oxide
UR - http://www.scopus.com/inward/record.url?scp=34247542508&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2006.11.070
DO - 10.1016/j.tsf.2006.11.070
M3 - Article
AN - SCOPUS:34247542508
VL - 515
SP - 6512
EP - 6517
JO - THIN SOLID FILMS
JF - THIN SOLID FILMS
SN - 0040-6090
IS - 16 SPEC. ISS.
ER -