Details
| Original language | English |
|---|---|
| Pages (from-to) | 506-509 |
| Number of pages | 4 |
| Journal | Microelectronics journal |
| Volume | 36 |
| Issue number | 3-6 |
| Early online date | 19 Mar 2005 |
| Publication status | Published - Mar 2005 |
Abstract
We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 180° rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown that the amount of subsurface B on the surface and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the (3×3)R30°-Si(111) surface covered by atleast 1/3 ML B resulted in the formation of a 180° rotation twin. The presented technology should also be suitable to prepare a new type of semiconductor heterostructures based on Si polytypes.
Keywords
- Molecular beam epitaxy, Silicon, Superlattice, Twinning
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronics journal, Vol. 36, No. 3-6, 03.2005, p. 506-509.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Epitaxial growth of non-cubic silicon
AU - Fissel, A.
AU - Wang, C.
AU - Bugiel, E.
AU - Osten, H. J.
PY - 2005/3
Y1 - 2005/3
N2 - We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 180° rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown that the amount of subsurface B on the surface and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the (3×3)R30°-Si(111) surface covered by atleast 1/3 ML B resulted in the formation of a 180° rotation twin. The presented technology should also be suitable to prepare a new type of semiconductor heterostructures based on Si polytypes.
AB - We report about the formation of a Si twinning-superlattice (TSL). Si layers containing 180° rotation twin boundaries arranged periodical along the [111] direction and only separated by 2.5 nm (corresponding to TSL) have been prepared by molecular beam epitaxy. The method consists of repeating of several growth and annealing circles on boron(B)-predeposited undoped Si substrates. It is shown that the amount of subsurface B on the surface and the growth mode influence the formation of twin boundaries. Only the nucleation of Si on the (3×3)R30°-Si(111) surface covered by atleast 1/3 ML B resulted in the formation of a 180° rotation twin. The presented technology should also be suitable to prepare a new type of semiconductor heterostructures based on Si polytypes.
KW - Molecular beam epitaxy
KW - Silicon
KW - Superlattice
KW - Twinning
UR - http://www.scopus.com/inward/record.url?scp=33644544080&partnerID=8YFLogxK
U2 - 10.1016/j.mejo.2005.02.064
DO - 10.1016/j.mejo.2005.02.064
M3 - Conference article
AN - SCOPUS:33644544080
VL - 36
SP - 506
EP - 509
JO - Microelectronics journal
JF - Microelectronics journal
SN - 0026-2692
IS - 3-6
ER -