Details
| Original language | English |
|---|---|
| Article number | 115302 |
| Number of pages | 13 |
| Journal | Journal of applied physics |
| Volume | 135 |
| Issue number | 11 |
| Early online date | 19 Mar 2024 |
| Publication status | Published - 21 Mar 2024 |
Abstract
This study explores the growth and structural characteristics of N d 2 O 3 layers on virtual germanium-rich SiGe substrates on Si(111). We focus on the emergence of the hexagonal phase depending on the stoichiometry of the virtual substrate. X-ray diffraction measurements reveal a hexagonal phase when N d 2 O 3 is grown directly on Si(111), while growth on Ge leads to a cubic oxide structure. On SiGe layers, the growth of the oxide results in a mixed phase containing hexagonal and cubic regions, regardless of the Ge content. The cubic structure grown on virtual Ge substrates exhibits strong tensile strain, while layers grown on SiGe layers show no strain. In situ growth control via electron diffraction shows a dependence of the oxide structure of the surface reconstruction of the virtual substrate. Growth on a 7 × 7 reconstruction leads to hexagonal parts on Si-based substrates, while growth on c ( 2 × 8 ) results in cubic oxide growth on Ge. Furthermore, oxide layers grown on virtual SiGe substrates form an interfacial silicate layer. The thickness of the interfacial layer is influenced by the Si content and the structure of the oxide layer enabling oxygen diffusion pathways.
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In: Journal of applied physics, Vol. 135, No. 11, 115302, 21.03.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial growth of Nd2O3 layers on virtual SiGe substrates on Si(111)
AU - Genath, H.
AU - Schubert, M. A.
AU - Yamtomo, H. L.
AU - Krügener, J.
AU - Osten, H. J.
PY - 2024/3/21
Y1 - 2024/3/21
N2 - This study explores the growth and structural characteristics of N d 2 O 3 layers on virtual germanium-rich SiGe substrates on Si(111). We focus on the emergence of the hexagonal phase depending on the stoichiometry of the virtual substrate. X-ray diffraction measurements reveal a hexagonal phase when N d 2 O 3 is grown directly on Si(111), while growth on Ge leads to a cubic oxide structure. On SiGe layers, the growth of the oxide results in a mixed phase containing hexagonal and cubic regions, regardless of the Ge content. The cubic structure grown on virtual Ge substrates exhibits strong tensile strain, while layers grown on SiGe layers show no strain. In situ growth control via electron diffraction shows a dependence of the oxide structure of the surface reconstruction of the virtual substrate. Growth on a 7 × 7 reconstruction leads to hexagonal parts on Si-based substrates, while growth on c ( 2 × 8 ) results in cubic oxide growth on Ge. Furthermore, oxide layers grown on virtual SiGe substrates form an interfacial silicate layer. The thickness of the interfacial layer is influenced by the Si content and the structure of the oxide layer enabling oxygen diffusion pathways.
AB - This study explores the growth and structural characteristics of N d 2 O 3 layers on virtual germanium-rich SiGe substrates on Si(111). We focus on the emergence of the hexagonal phase depending on the stoichiometry of the virtual substrate. X-ray diffraction measurements reveal a hexagonal phase when N d 2 O 3 is grown directly on Si(111), while growth on Ge leads to a cubic oxide structure. On SiGe layers, the growth of the oxide results in a mixed phase containing hexagonal and cubic regions, regardless of the Ge content. The cubic structure grown on virtual Ge substrates exhibits strong tensile strain, while layers grown on SiGe layers show no strain. In situ growth control via electron diffraction shows a dependence of the oxide structure of the surface reconstruction of the virtual substrate. Growth on a 7 × 7 reconstruction leads to hexagonal parts on Si-based substrates, while growth on c ( 2 × 8 ) results in cubic oxide growth on Ge. Furthermore, oxide layers grown on virtual SiGe substrates form an interfacial silicate layer. The thickness of the interfacial layer is influenced by the Si content and the structure of the oxide layer enabling oxygen diffusion pathways.
UR - http://www.scopus.com/inward/record.url?scp=85188457142&partnerID=8YFLogxK
U2 - 10.1063/5.0191350
DO - 10.1063/5.0191350
M3 - Article
AN - SCOPUS:85188457142
VL - 135
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 11
M1 - 115302
ER -