Details
| Original language | English |
|---|---|
| Pages (from-to) | 523-526 |
| Number of pages | 4 |
| Journal | VACUUM |
| Volume | 85 |
| Issue number | 4 |
| Publication status | Published - 21 Oct 2010 |
Abstract
In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
Keywords
- Molecular beam epitaxy, Rare-earth oxide, Silicon-on-insulator
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Instrumentation
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
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In: VACUUM, Vol. 85, No. 4, 21.10.2010, p. 523-526.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial growth and thermal stability of silicon layers on crystalline gadolinium oxide
AU - Dargis, R.
AU - Fissel, A.
AU - Schwendt, D.
AU - Bugiel, E.
AU - Krügener, J.
AU - Wietler, T.
AU - Laha, A.
AU - Osten, H. J.
PY - 2010/10/21
Y1 - 2010/10/21
N2 - In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
AB - In this work, an unconventional approach for epitaxial growth of Si on single-crystalline rare-earth oxide is presented using molecular beam epitaxy under ultra-high vacuum. Surface and bulk crystalline structures as well as chemical content were examined. Silicon-on-insulator layers were fabricated by encapsulated solid phase epitaxy on Si(111) substrate. The gadolinium oxide capping layer was removed by wet-chemical etching. The remaining silicon layer is single crystalline without any impurities and exhibits 7 × 7 reconstructed surface after annealing in very low silicon flux in the growth chamber. The thermal stability of the fabricated silicon-on-insulator structure was studied by step-wise heating under ultra-high vacuum conditions. The fabricated ultra-thin (10-15 nm) silicon-on-oxide layers remain structurally and chemically stable up to 900 °C.
KW - Molecular beam epitaxy
KW - Rare-earth oxide
KW - Silicon-on-insulator
UR - http://www.scopus.com/inward/record.url?scp=78649644175&partnerID=8YFLogxK
U2 - 10.1016/j.vacuum.2010.01.026
DO - 10.1016/j.vacuum.2010.01.026
M3 - Article
AN - SCOPUS:78649644175
VL - 85
SP - 523
EP - 526
JO - VACUUM
JF - VACUUM
SN - 0042-207X
IS - 4
ER -