Details
| Original language | English |
|---|---|
| Article number | 153501 |
| Journal | Applied physics letters |
| Volume | 103 |
| Issue number | 15 |
| Publication status | Published - 7 Oct 2013 |
Abstract
Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si 1-xGex layers using same technique. Pt/Gd 2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd 2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ∼1011 cm-2 eV-1.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Applied physics letters, Vol. 103, No. 15, 153501, 07.10.2013.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial Gd2O3 on strained Si1-xGe x layers for next generation complementary metal oxide semiconductor device application
AU - Ghosh, Kankat
AU - Das, Sudipta
AU - Fissel, A.
AU - Osten, H. J.
AU - Laha, Apurba
PY - 2013/10/7
Y1 - 2013/10/7
N2 - Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si 1-xGex layers using same technique. Pt/Gd 2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd 2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ∼1011 cm-2 eV-1.
AB - Strained Si1-xGex (x = 0.1-0.4) layers were grown on Si(111) and Si(001) substrates using molecular beam epitaxy followed by the growth of epitaxial Gd2O3 thin films on Si 1-xGex layers using same technique. Pt/Gd 2O3/Si1-xGex/Si stacks fabricated by several in situ process steps exhibit excellent electrical properties. Surface and microstructural analysis of both Si1-xGex and Gd 2O3 layers carried out by different in situ and ex situ tools reveal a relaxed epi-Gd2O3 layer on a strained Si1-xGex layer on both Si(111) and Si(001) substrates with sharp interfaces between the oxide and the SiGe layer. Standard electrical measurements, such as capacitance-voltage and leakage current analysis, demonstrate promising electrical properties for such metal oxide semiconductor capacitors. A capacitance equivalent thickness as low as 1.20 nm with associated leakage current density of 2.0 mA/cm2 was obtained for devices with 4.5 nm thin oxide films where the density of interface trap (Dit) was only ∼1011 cm-2 eV-1.
UR - http://www.scopus.com/inward/record.url?scp=84886894347&partnerID=8YFLogxK
U2 - 10.1063/1.4824422
DO - 10.1063/1.4824422
M3 - Article
AN - SCOPUS:84886894347
VL - 103
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 15
M1 - 153501
ER -