Details
| Original language | English |
|---|---|
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Reviews on Advanced Materials Science |
| Volume | 8 |
| Issue number | 1 |
| Publication status | Published - Dec 2004 |
Abstract
Electron beam lithography in ultra-high vacuum is combined with epitaxy of silver on Si(111) to generate crystalline metal nanowires of few atomic layers thickness and a width of less than 20 nm on an insulating support. The experiments are performed in a combined SEM-STM system for confocal and simultaneous operation of both microscopes at variable sample temperatures in the range 60-900K. Employing electron beam-induced selective thermal desorption, clean Si(111) windows are generated within a thin thermal surface oxide layer of 0.3-0.7 nm thickness. During deposition of Ag at a sample temperature of 130K small Ag islands nucleate in the Si windows as well as on the oxide areas. Subsequent annealing to room temperature or above leads to the formation of continuous flat epitaxial Ag islands constricted to the window areas. When the surface is annealed up to 700K the islands coalesce in the direction that is unconstricted by the oxide mask up to a length of some 100 nm while spherical non-percolated Ag clusters with diameters of several nanometers form on the oxide areas.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Reviews on Advanced Materials Science, Vol. 8, No. 1, 12.2004, p. 1-9.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epitaxial Ag nanowires on Si(111) generated via electron beam lithography in ultrahigh vacuum
AU - Zielasek, Volkmar
AU - Block, Thomas
AU - Pfnür, Herbert
PY - 2004/12
Y1 - 2004/12
N2 - Electron beam lithography in ultra-high vacuum is combined with epitaxy of silver on Si(111) to generate crystalline metal nanowires of few atomic layers thickness and a width of less than 20 nm on an insulating support. The experiments are performed in a combined SEM-STM system for confocal and simultaneous operation of both microscopes at variable sample temperatures in the range 60-900K. Employing electron beam-induced selective thermal desorption, clean Si(111) windows are generated within a thin thermal surface oxide layer of 0.3-0.7 nm thickness. During deposition of Ag at a sample temperature of 130K small Ag islands nucleate in the Si windows as well as on the oxide areas. Subsequent annealing to room temperature or above leads to the formation of continuous flat epitaxial Ag islands constricted to the window areas. When the surface is annealed up to 700K the islands coalesce in the direction that is unconstricted by the oxide mask up to a length of some 100 nm while spherical non-percolated Ag clusters with diameters of several nanometers form on the oxide areas.
AB - Electron beam lithography in ultra-high vacuum is combined with epitaxy of silver on Si(111) to generate crystalline metal nanowires of few atomic layers thickness and a width of less than 20 nm on an insulating support. The experiments are performed in a combined SEM-STM system for confocal and simultaneous operation of both microscopes at variable sample temperatures in the range 60-900K. Employing electron beam-induced selective thermal desorption, clean Si(111) windows are generated within a thin thermal surface oxide layer of 0.3-0.7 nm thickness. During deposition of Ag at a sample temperature of 130K small Ag islands nucleate in the Si windows as well as on the oxide areas. Subsequent annealing to room temperature or above leads to the formation of continuous flat epitaxial Ag islands constricted to the window areas. When the surface is annealed up to 700K the islands coalesce in the direction that is unconstricted by the oxide mask up to a length of some 100 nm while spherical non-percolated Ag clusters with diameters of several nanometers form on the oxide areas.
UR - http://www.scopus.com/inward/record.url?scp=12944271881&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:12944271881
VL - 8
SP - 1
EP - 9
JO - Reviews on Advanced Materials Science
JF - Reviews on Advanced Materials Science
SN - 1606-5131
IS - 1
ER -