Details
| Original language | English |
|---|---|
| Article number | 063502 |
| Number of pages | 5 |
| Journal | Applied Physics Letters |
| Volume | 115 |
| Issue number | 6 |
| Publication status | Published - 8 Aug 2019 |
Abstract
In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied Physics Letters, Vol. 115, No. 6, 063502, 08.08.2019.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer
T2 - A fully epitaxial system for high power application
AU - Sarkar, Ritam
AU - Bhunia, S.
AU - Nag, D.
AU - Barik, B. C.
AU - Das Gupta, K.
AU - Saha, D.
AU - Ganguly, S.
AU - Laha, Apurba
AU - Lemettinen, Jori
AU - Kauppinen, Christoffer
AU - Kim, Iurii
AU - Suihkonen, Sami
AU - Gribisch, Philipp
AU - Osten, Hans-Jörg
PY - 2019/8/8
Y1 - 2019/8/8
N2 - In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.
AB - In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam epitaxy technique under a metal gate (metal/Gd2O3/AlGaN/GaN) causes six orders of magnitude reduction in gate leakage current compared to metal/AlGaN/GaN HEMT. We observe that epi-Gd2O3 undergoes complete structural changes from hexagonal to monoclinic as the thickness of the layer is increased from 2.8 nm to 15 nm. Such structural transformation is found to have a strong impact on electrical properties whereby the gate leakage current reaches its minimum value when the oxide thickness is 2.8 nm. We find a similar trend in the density of interface traps (Dit) having a minimum value of 2.98 × 1012 cm-2 eV-1 for the epioxide layer of thickness 2.8 nm. Our measurements also confirm a significant increase in the two dimensional electron gas (2DEG) density (∼40%) at AlGaN/GaN interface with epioxide grown on AlGaN, thus confirming the contribution of epitaxial lattice strain on 2DEG modulation.
UR - http://www.scopus.com/inward/record.url?scp=85070539653&partnerID=8YFLogxK
U2 - 10.1063/1.5109861
DO - 10.1063/1.5109861
M3 - Article
AN - SCOPUS:85070539653
VL - 115
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 6
M1 - 063502
ER -