Details
| Original language | English |
|---|---|
| Pages (from-to) | 3786-3789 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (C) Current Topics in Solid State Physics |
| Volume | 3 |
| Issue number | 11 |
| Publication status | Published - 1 Dec 2006 |
| Event | 4th International Conference on Semiconductor Quantum Dots, QD2006 - Chamonix-Mont Blanc, France Duration: 1 May 2006 → 5 May 2006 |
Abstract
We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 3, No. 11, 01.12.2006, p. 3786-3789.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Enhanced shot noise in tunneling through coupled self-assembled InAs quantum dots
AU - Barthold, P.
AU - Hohls, F.
AU - Maire, N.
AU - Pierz, K.
AU - Haug, R. J.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
AB - We present measurements of the shot noise of vertically coupled self-assembled InAs quantum dots (QDs) and find a surprising enhancement with a distinct double-peak structure. 1By applying an external bias voltage we observe pronounced peaks in the dc current-voltage characteristics that correspond to electron transport through a stack of vertically coupled QDs. At these peaks we find enhanced shot noise in contrast to suppressed shot noise at a single layer of QDs. To characterize the measured shot noise S the so-called Fano factor α is introduced. At both sides of the current peak the Fano factor α rises to values up to 1.4, whereas the noise is reduced on top of the peak (α < 1). We discuss qualitative agreement with a theoretical model which predict such a super-Poissonian shot noise.
UR - http://www.scopus.com/inward/record.url?scp=49649127711&partnerID=8YFLogxK
U2 - 10.1002/pssc.200671581
DO - 10.1002/pssc.200671581
M3 - Conference article
AN - SCOPUS:49649127711
VL - 3
SP - 3786
EP - 3789
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 11
T2 - 4th International Conference on Semiconductor Quantum Dots, QD2006
Y2 - 1 May 2006 through 5 May 2006
ER -