Details
| Original language | English |
|---|---|
| Pages (from-to) | 530-533 |
| Number of pages | 4 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 7 |
| Issue number | 8 |
| Publication status | Published - Aug 2013 |
| Externally published | Yes |
Abstract
Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiOx:H or AlOy SiOx:H polymer films were spun on top of an ultra-thin (<10 nm) atomic-layer-deposited (ALD) Al2O3 layer, itself deposited on low-resistivity (1 Ω cm) p-type crystalline silicon wafers. These double-layer stacks were compared to both ALD Al2O3 single layers and ALD Al2O3/plasma-enhanced chemical vapour deposited (PECVD) SiNx stacks, in terms of surface passivation, firing stability and rear-side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al2O3 layers in the 4-8 nm range. Whilst the surface passivation of the single ALD Al2O3 layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al2O3/SiOx:H and ALD Al2O3/AlOy SiOx:H stacks. Using simple two-dimensional optical modelling of rear-side reflection it is shown that the low refractive index exhibited by SiOx:H and AlOy SiOx:H results in superior optical performance as compared to PECVD SiNx, with gains in photogenerated current of ~0.125 mA/cm2 at a capping thickness of 100 nm. (
Keywords
- Aluminium oxide, Capping films, Firing stability, Silicon solar cells, Surface passivation
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 7, No. 8, 08.2013, p. 530-533.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Enhanced rear-side reflection and firing-stable surface passivation of silicon solar cells with capping polymer films
AU - Bullock, James
AU - Thomson, Andrew
AU - Cuevas, Andrés
AU - Veith, Boris
AU - Schmidt, Jan
AU - Karkkainen, Ari
PY - 2013/8
Y1 - 2013/8
N2 - Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiOx:H or AlOy SiOx:H polymer films were spun on top of an ultra-thin (<10 nm) atomic-layer-deposited (ALD) Al2O3 layer, itself deposited on low-resistivity (1 Ω cm) p-type crystalline silicon wafers. These double-layer stacks were compared to both ALD Al2O3 single layers and ALD Al2O3/plasma-enhanced chemical vapour deposited (PECVD) SiNx stacks, in terms of surface passivation, firing stability and rear-side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al2O3 layers in the 4-8 nm range. Whilst the surface passivation of the single ALD Al2O3 layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al2O3/SiOx:H and ALD Al2O3/AlOy SiOx:H stacks. Using simple two-dimensional optical modelling of rear-side reflection it is shown that the low refractive index exhibited by SiOx:H and AlOy SiOx:H results in superior optical performance as compared to PECVD SiNx, with gains in photogenerated current of ~0.125 mA/cm2 at a capping thickness of 100 nm. (
AB - Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiOx:H or AlOy SiOx:H polymer films were spun on top of an ultra-thin (<10 nm) atomic-layer-deposited (ALD) Al2O3 layer, itself deposited on low-resistivity (1 Ω cm) p-type crystalline silicon wafers. These double-layer stacks were compared to both ALD Al2O3 single layers and ALD Al2O3/plasma-enhanced chemical vapour deposited (PECVD) SiNx stacks, in terms of surface passivation, firing stability and rear-side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al2O3 layers in the 4-8 nm range. Whilst the surface passivation of the single ALD Al2O3 layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al2O3/SiOx:H and ALD Al2O3/AlOy SiOx:H stacks. Using simple two-dimensional optical modelling of rear-side reflection it is shown that the low refractive index exhibited by SiOx:H and AlOy SiOx:H results in superior optical performance as compared to PECVD SiNx, with gains in photogenerated current of ~0.125 mA/cm2 at a capping thickness of 100 nm. (
KW - Aluminium oxide
KW - Capping films
KW - Firing stability
KW - Silicon solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84881667817&partnerID=8YFLogxK
U2 - 10.1002/pssr.201307200
DO - 10.1002/pssr.201307200
M3 - Article
AN - SCOPUS:84881667817
VL - 7
SP - 530
EP - 533
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 8
ER -