Details
| Original language | English |
|---|---|
| Title of host publication | Physics and Technology of High-k Materials 9 |
| Publisher | Electrochemical Society, Inc. |
| Pages | 101-107 |
| Number of pages | 7 |
| Edition | 3 |
| ISBN (electronic) | 9781607682578 |
| ISBN (print) | 9781566779036 |
| Publication status | Published - 2011 |
| Event | 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting - Boston, MA, United States Duration: 10 Oct 2011 → 12 Oct 2011 |
Publication series
| Name | ECS Transactions |
|---|---|
| Number | 3 |
| Volume | 41 |
| ISSN (Print) | 1938-5862 |
| ISSN (electronic) | 1938-6737 |
Abstract
The impact of carbon doping on electrical properties of epitaxial Gd 2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.
ASJC Scopus subject areas
- Engineering(all)
- General Engineering
Cite this
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Physics and Technology of High-k Materials 9. 3. ed. Electrochemical Society, Inc., 2011. p. 101-107 (ECS Transactions; Vol. 41, No. 3).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Enhanced electrical properties of carbon doped epitaxial Gd 2O3 thin films on Si substrates
AU - Laha, Apurba
AU - Bin, A.
AU - Babu, P. R.P.
AU - Fissel, A.
AU - Osten, H. J.
PY - 2011
Y1 - 2011
N2 - The impact of carbon doping on electrical properties of epitaxial Gd 2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.
AB - The impact of carbon doping on electrical properties of epitaxial Gd 2O3 grown on Si substrates has been studied. The doping with low concentration of carbon into epitaxial Gd2O3 shows strong influence on dielectric properties especially to the reduction of leakage current behavior. The structural quality of the oxide layer is merely influenced by small amount of carbon incorporation. The most critical observation of this study is that the very often found adverse effect of oxygen vacancy induced defects in oxides grown at higher temperature could be eliminated by moderate amount of carbon doping during growth.
UR - http://www.scopus.com/inward/record.url?scp=84857324180&partnerID=8YFLogxK
U2 - 10.1149/1.3633025
DO - 10.1149/1.3633025
M3 - Conference contribution
AN - SCOPUS:84857324180
SN - 9781566779036
T3 - ECS Transactions
SP - 101
EP - 107
BT - Physics and Technology of High-k Materials 9
PB - Electrochemical Society, Inc.
T2 - 9th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics - 220th ECS Meeting
Y2 - 10 October 2011 through 12 October 2011
ER -