Energy loss rate of excitons in GaN

Research output: Contribution to journalConference articleResearchpeer review

Authors

  • D. Hägele
  • R. Zimmermann
  • Michael Oestreich
  • M. R. Hofmann
  • W. W. Rühle
  • Bruno K. Meyer
  • H. Amano
  • I. Akasaki

External Research Organisations

  • Philipps-Universität Marburg
  • Meiji University
  • Justus Liebig University Giessen
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Details

Original languageEnglish
Pages (from-to)409-411
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
Publication statusPublished - 7 Dec 1999
Externally publishedYes
Event1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: 19 Jul 199923 Jul 1999

Abstract

The cooling of a hot photoexcited exciton distribution in wurtzite GaN is studied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the excitons decreases for sample temperatures below 60 K within 150 ps down to the lattice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV.

ASJC Scopus subject areas

Cite this

Energy loss rate of excitons in GaN. / Hägele, D.; Zimmermann, R.; Oestreich, Michael et al.
In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 07.12.1999, p. 409-411.

Research output: Contribution to journalConference articleResearchpeer review

Hägele, D, Zimmermann, R, Oestreich, M, Hofmann, MR, Rühle, WW, Meyer, BK, Amano, H & Akasaki, I 1999, 'Energy loss rate of excitons in GaN', Physica B: Condensed Matter, vol. 272, no. 1-4, pp. 409-411. https://doi.org/10.1016/S0921-4526(99)00387-7
Hägele, D., Zimmermann, R., Oestreich, M., Hofmann, M. R., Rühle, W. W., Meyer, B. K., Amano, H., & Akasaki, I. (1999). Energy loss rate of excitons in GaN. Physica B: Condensed Matter, 272(1-4), 409-411. https://doi.org/10.1016/S0921-4526(99)00387-7
Hägele D, Zimmermann R, Oestreich M, Hofmann MR, Rühle WW, Meyer BK et al. Energy loss rate of excitons in GaN. Physica B: Condensed Matter. 1999 Dec 7;272(1-4):409-411. doi: 10.1016/S0921-4526(99)00387-7
Hägele, D. ; Zimmermann, R. ; Oestreich, Michael et al. / Energy loss rate of excitons in GaN. In: Physica B: Condensed Matter. 1999 ; Vol. 272, No. 1-4. pp. 409-411.
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AU - Hägele, D.

AU - Zimmermann, R.

AU - Oestreich, Michael

AU - Hofmann, M. R.

AU - Rühle, W. W.

AU - Meyer, Bruno K.

AU - Amano, H.

AU - Akasaki, I.

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AB - The cooling of a hot photoexcited exciton distribution in wurtzite GaN is studied by time-resolved photoluminescence measurements on the longitudinal optical phonon replicas of the free exciton. The temperature of the excitons decreases for sample temperatures below 60 K within 150 ps down to the lattice temperature. The transient temperature is theoretically described in terms of exciton-phonon scattering via an acoustic deformation potential of 13 eV.

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DO - 10.1016/S0921-4526(99)00387-7

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EP - 411

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JF - Physica B: Condensed Matter

SN - 0921-4526

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T2 - 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

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