Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Apurba Laha
  • E. Bugiel
  • M. Jestremski
  • R. Ranjith
  • A. Fissel
  • H. J. Osten

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Original languageEnglish
Article number475604
JournalNANOTECHNOLOGY
Volume20
Issue number47
Publication statusPublished - 29 Oct 2009

Abstract

An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O 3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique.

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Cite this

Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. / Laha, Apurba; Bugiel, E.; Jestremski, M. et al.
In: NANOTECHNOLOGY, Vol. 20, No. 47, 475604, 29.10.2009.

Research output: Contribution to journal › Article › Research › peer review

Laha, A, Bugiel, E, Jestremski, M, Ranjith, R, Fissel, A & Osten, HJ 2009, 'Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide', NANOTECHNOLOGY, vol. 20, no. 47, 475604. https://doi.org/10.1088/0957-4484/20/47/475604
Laha, A., Bugiel, E., Jestremski, M., Ranjith, R., Fissel, A., & Osten, H. J. (2009). Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. NANOTECHNOLOGY, 20(47), Article 475604. https://doi.org/10.1088/0957-4484/20/47/475604
Laha A, Bugiel E, Jestremski M, Ranjith R, Fissel A, Osten HJ. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. NANOTECHNOLOGY. 2009 Oct 29;20(47):475604. doi: 10.1088/0957-4484/20/47/475604
Laha, Apurba ; Bugiel, E. ; Jestremski, M. et al. / Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide. In: NANOTECHNOLOGY. 2009 ; Vol. 20, No. 47.
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