Details
| Original language | English |
|---|---|
| Article number | 045007 |
| Journal | Semiconductor Science and Technology |
| Volume | 32 |
| Issue number | 4 |
| Publication status | Published - Apr 2017 |
Abstract
Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.
Keywords
- ellipsometry, empirical model, mesoporous silicon, p-type, self-organized, statistical design of experiments
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Semiconductor Science and Technology, Vol. 32, No. 4, 045007, 04.2017.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Empirical model predicting the layer thickness and porosity of p-type mesoporous silicon
AU - Wolter, S.J.
AU - Geisler, D.
AU - Hensen, J.
AU - Köntges, M.
AU - Kajari-Schröder, S.
AU - Bahnemann, D.W.
AU - Brendel, R.
N1 - Publisher Copyright: © 2017 IOP Publishing Ltd. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/4
Y1 - 2017/4
N2 - Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.
AB - Porous silicon is a promising material for a wide range of applications because of its versatile layer properties and the convenient preparation by electrochemical etching. Nevertheless, the quantitative dependency of the layer thickness and porosity on the etching process parameters is yet unknown. We have developed an empirical model to predict the porosity and layer thickness of p-type mesoporous silicon prepared by electrochemical etching. The impact of the process parameters such as current density, etching time and concentration of hydrogen fluoride is evaluated by ellipsometry. The main influences on the porosity of the porous silicon are the current density, the etching time and their product while the etch rate is dominated by the current density, the concentration of hydrogen fluoride and their product. The developed model predicts the resulting layer properties of a certain porosification process and can, for example be used to enhance the utilization of the employed chemicals.
KW - ellipsometry
KW - empirical model
KW - mesoporous silicon
KW - p-type
KW - self-organized
KW - statistical design of experiments
UR - http://www.scopus.com/inward/record.url?scp=85016990828&partnerID=8YFLogxK
U2 - 10.1088/1361-6641/aa5bb7
DO - 10.1088/1361-6641/aa5bb7
M3 - Article
VL - 32
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 4
M1 - 045007
ER -