Details
| Original language | English |
|---|---|
| Title of host publication | 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 2808-2812 |
| Number of pages | 5 |
| ISBN (electronic) | 9781479943982 |
| Publication status | Published - 15 Oct 2014 |
| Event | 40th IEEE Photovoltaic Specialist Conference, PVSC 2014 - Denver, United States Duration: 8 Jun 2014 → 13 Jun 2014 |
Abstract
In this work, we investigate the recombination current density of ion-implanted boron emitters, which are contacted with a screen printed silver/aluminum paste. Depending on the peak doping concentration and on the depth of the doping profile, we measure a significantly increased recombination current density below those contacts of up to 3500 fA/cm2. This is 3.8 times higher than the expectations obtained from device simulations. The metallized emitter surface recombination is lower when using an emitter with higher front side doping or deeper emitter doping profile. We present two approaches to reduce the recombination losses due to the metallization: (a) dual print with a non-firing busbar paste and fineline fingers yields a gain in efficiency of 0.4 % and (b) selective emitters with a higher emitter doping level underneath the front contacts and a lower doping in the intra-finger regions yield a gain in short-circuit current and open-circuit voltage compared to homogeneous emitters.
Keywords
- emitter, metallization, photovoltaic cells, screen print, silicon, surface recombination
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
Sustainable Development Goals
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2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 2808-2812 6925514.
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Emitter recombination current densities of boron emitters with silver/aluminum pastes
AU - Kiefer, Fabian
AU - Peibst, Robby
AU - Ohrdes, Tobias
AU - Krügener, Jan
AU - Osten, H. Jörg
AU - Brendel, Rolf
PY - 2014/10/15
Y1 - 2014/10/15
N2 - In this work, we investigate the recombination current density of ion-implanted boron emitters, which are contacted with a screen printed silver/aluminum paste. Depending on the peak doping concentration and on the depth of the doping profile, we measure a significantly increased recombination current density below those contacts of up to 3500 fA/cm2. This is 3.8 times higher than the expectations obtained from device simulations. The metallized emitter surface recombination is lower when using an emitter with higher front side doping or deeper emitter doping profile. We present two approaches to reduce the recombination losses due to the metallization: (a) dual print with a non-firing busbar paste and fineline fingers yields a gain in efficiency of 0.4 % and (b) selective emitters with a higher emitter doping level underneath the front contacts and a lower doping in the intra-finger regions yield a gain in short-circuit current and open-circuit voltage compared to homogeneous emitters.
AB - In this work, we investigate the recombination current density of ion-implanted boron emitters, which are contacted with a screen printed silver/aluminum paste. Depending on the peak doping concentration and on the depth of the doping profile, we measure a significantly increased recombination current density below those contacts of up to 3500 fA/cm2. This is 3.8 times higher than the expectations obtained from device simulations. The metallized emitter surface recombination is lower when using an emitter with higher front side doping or deeper emitter doping profile. We present two approaches to reduce the recombination losses due to the metallization: (a) dual print with a non-firing busbar paste and fineline fingers yields a gain in efficiency of 0.4 % and (b) selective emitters with a higher emitter doping level underneath the front contacts and a lower doping in the intra-finger regions yield a gain in short-circuit current and open-circuit voltage compared to homogeneous emitters.
KW - emitter
KW - metallization
KW - photovoltaic cells
KW - screen print
KW - silicon
KW - surface recombination
UR - http://www.scopus.com/inward/record.url?scp=84912098864&partnerID=8YFLogxK
U2 - 10.1109/pvsc.2014.6925514
DO - 10.1109/pvsc.2014.6925514
M3 - Conference contribution
AN - SCOPUS:84912098864
SP - 2808
EP - 2812
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
Y2 - 8 June 2014 through 13 June 2014
ER -