Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Apurba Laha
  • D. Kühne
  • E. Bugiel
  • A. Fissel
  • H. J. Osten
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Details

Original languageEnglish
Pages (from-to)85015
Number of pages1
JournalSemiconductor Science and Technology
Volume23
Issue number8
Publication statusPublished - Aug 2008

Abstract

Structural and electrical properties of nonvolatile Si nanocluster memories using epitaxial Gd2O3 as a control and tunneling layer are demonstrated for the first time. Nanoclusters with average size of 5 nm and density of 2 × 1012 cm-2 exhibit excellent charge storage capacity with higher retention (∼105 s) and endurance (105 write/erase cycles) characteristics. The Pt/Gd2O 3/Si MOS capacitors comprising Si nanoclusters display large hysteresis (∼1.5-2 V) in capacitance-voltage measurements. We find that these Si nanoclusters are bonded with the metal oxide via Gd-O-Si (silicate-like) bonds as observed in x-ray photoelectron spectroscopy measurements. With such results demonstrated, Si nanoclusters embedded in an epitaxial rare earth oxide could be a potential candidate for future non-volatile memory devices.

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Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications. / Laha, Apurba; Kühne, D.; Bugiel, E. et al.
In: Semiconductor Science and Technology, Vol. 23, No. 8, 08.2008, p. 85015.

Research output: Contribution to journalArticleResearchpeer review

Laha A, Kühne D, Bugiel E, Fissel A, Osten HJ. Embedding silicon nanoclusters into epitaxial rare earth oxide for nonvolatile memory applications. Semiconductor Science and Technology. 2008 Aug;23(8):85015. doi: 10.1088/0268-1242/23/8/085015
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AU - Kühne, D.

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AU - Fissel, A.

AU - Osten, H. J.

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