Details
| Original language | English |
|---|---|
| Title of host publication | SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics |
| Editors | Rolf Brendel, Jef Poortmans, Arthur Weeber, Giso Hahn, Christophe Ballif, Stefan Glunz, Pierre-Jean Ribeyron |
| Publisher | American Institute of Physics Inc. |
| ISBN (print) | 9780735417151 |
| Publication status | Published - 10 Aug 2018 |
| Event | SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics - Lausanne, Switzerland Duration: 19 Mar 2018 → 21 Mar 2018 |
Publication series
| Name | AIP Conference Proceedings |
|---|---|
| Volume | 1999 |
| ISSN (Print) | 0094-243X |
| ISSN (electronic) | 1551-7616 |
Abstract
Atomic-layer-deposited titanium oxide (TiOx) is examined for the application as electron-selective full-area contact to n-type silicon solar cells. Although the surface passivation quality of TiOx-passivated n-type silicon wafers is quite poor directly after deposition of the TiOx, we demonstrate that annealing in ambient environment at only 250°C reduces the surface recombination velocity to values below 10 cm/s over the entire cell-relevant injection range. By combining lifetime measurements with X-ray diffraction (XRD) characterization we demonstrate that the degradation of the passivation by TiOx during annealing at increased temperature is due to the crystallization of the amorphous TiOx into the crystalline anatase phase. We implement our optimized ALD-TiOx layers as electron-selective full-area rear contacts into n-type silicon solar cells and reach efficiencies up to 20.3% after low-temperature annealing in our first batch. The surface recombination velocity Srear at the cell rear, as extracted from the measured spectral internal quantum efficiency, is (52±20) cm/s. Interestingly, the fabricated solar cells show a much better thermal stability compared to the lifetime test structures, which seems to be a fundamental difference. The main difference of the finished solar cells to our lifetime test structures is that the TiOx layer is fully covered with aluminum in the solar cells. This suggests an interaction of Al with the ultrathin TiOx layer, resulting in an improved thermal stability.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics. ed. / Rolf Brendel; Jef Poortmans; Arthur Weeber; Giso Hahn; Christophe Ballif; Stefan Glunz; Pierre-Jean Ribeyron. American Institute of Physics Inc., 2018. 040022 (AIP Conference Proceedings; Vol. 1999).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Electron-selective atomic-layer-deposited TiOx layers
T2 - SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics
AU - Titova, Valeriya
AU - Startsev, Dimitrij
AU - Schmidt, Jan
N1 - Funding Information: This work was supported by the German Federal Environmental Foundation (DBU) and the German State of Lower Saxony. We acknowledge the funding of this project within the PhD Scholarship Programme of the DBU.
PY - 2018/8/10
Y1 - 2018/8/10
N2 - Atomic-layer-deposited titanium oxide (TiOx) is examined for the application as electron-selective full-area contact to n-type silicon solar cells. Although the surface passivation quality of TiOx-passivated n-type silicon wafers is quite poor directly after deposition of the TiOx, we demonstrate that annealing in ambient environment at only 250°C reduces the surface recombination velocity to values below 10 cm/s over the entire cell-relevant injection range. By combining lifetime measurements with X-ray diffraction (XRD) characterization we demonstrate that the degradation of the passivation by TiOx during annealing at increased temperature is due to the crystallization of the amorphous TiOx into the crystalline anatase phase. We implement our optimized ALD-TiOx layers as electron-selective full-area rear contacts into n-type silicon solar cells and reach efficiencies up to 20.3% after low-temperature annealing in our first batch. The surface recombination velocity Srear at the cell rear, as extracted from the measured spectral internal quantum efficiency, is (52±20) cm/s. Interestingly, the fabricated solar cells show a much better thermal stability compared to the lifetime test structures, which seems to be a fundamental difference. The main difference of the finished solar cells to our lifetime test structures is that the TiOx layer is fully covered with aluminum in the solar cells. This suggests an interaction of Al with the ultrathin TiOx layer, resulting in an improved thermal stability.
AB - Atomic-layer-deposited titanium oxide (TiOx) is examined for the application as electron-selective full-area contact to n-type silicon solar cells. Although the surface passivation quality of TiOx-passivated n-type silicon wafers is quite poor directly after deposition of the TiOx, we demonstrate that annealing in ambient environment at only 250°C reduces the surface recombination velocity to values below 10 cm/s over the entire cell-relevant injection range. By combining lifetime measurements with X-ray diffraction (XRD) characterization we demonstrate that the degradation of the passivation by TiOx during annealing at increased temperature is due to the crystallization of the amorphous TiOx into the crystalline anatase phase. We implement our optimized ALD-TiOx layers as electron-selective full-area rear contacts into n-type silicon solar cells and reach efficiencies up to 20.3% after low-temperature annealing in our first batch. The surface recombination velocity Srear at the cell rear, as extracted from the measured spectral internal quantum efficiency, is (52±20) cm/s. Interestingly, the fabricated solar cells show a much better thermal stability compared to the lifetime test structures, which seems to be a fundamental difference. The main difference of the finished solar cells to our lifetime test structures is that the TiOx layer is fully covered with aluminum in the solar cells. This suggests an interaction of Al with the ultrathin TiOx layer, resulting in an improved thermal stability.
UR - http://www.scopus.com/inward/record.url?scp=85052000901&partnerID=8YFLogxK
U2 - 10.1063/1.5049285
DO - 10.1063/1.5049285
M3 - Conference contribution
AN - SCOPUS:85052000901
SN - 9780735417151
T3 - AIP Conference Proceedings
BT - SiliconPV 2018, the 8th International Conference on Crystalline Silicon Photovoltaics
A2 - Brendel, Rolf
A2 - Poortmans, Jef
A2 - Weeber, Arthur
A2 - Hahn, Giso
A2 - Ballif, Christophe
A2 - Glunz, Stefan
A2 - Ribeyron, Pierre-Jean
PB - American Institute of Physics Inc.
Y2 - 19 March 2018 through 21 March 2018
ER -