Details
| Original language | English |
|---|---|
| Pages (from-to) | 5-12 |
| Number of pages | 8 |
| Journal | Journal of materials research |
| Volume | 21 |
| Issue number | 1 |
| Publication status | Published - 1 Jan 2006 |
| Externally published | Yes |
Abstract
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Journal of materials research, Vol. 21, No. 1, 01.01.2006, p. 5-12.
Research output: Contribution to journal › Review article › Research › peer review
}
TY - JOUR
T1 - Electronically stimulated degradation of silicon solar cells
AU - Schmidt, J.
AU - Bothe, K.
AU - Macdonald, D.
AU - Adey, J.
AU - Jones, R.
AU - Palmer, D. W.
PY - 2006/1/1
Y1 - 2006/1/1
N2 - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
AB - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
UR - http://www.scopus.com/inward/record.url?scp=33644545733&partnerID=8YFLogxK
U2 - 10.1557/jmr.2006.0012
DO - 10.1557/jmr.2006.0012
M3 - Review article
AN - SCOPUS:33644545733
VL - 21
SP - 5
EP - 12
JO - Journal of materials research
JF - Journal of materials research
SN - 0884-2914
IS - 1
ER -