Details
| Original language | English |
|---|---|
| Article number | E6.1 |
| Pages (from-to) | 221-232 |
| Number of pages | 12 |
| Journal | Materials Research Society Symposium Proceedings |
| Volume | 864 |
| Publication status | Published - 2005 |
| Externally published | Yes |
| Event | 2005 materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 28 Mar 2005 → 1 Apr 2005 |
Abstract
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Mechanics of Materials
- Engineering(all)
- Mechanical Engineering
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In: Materials Research Society Symposium Proceedings, Vol. 864, E6.1, 2005, p. 221-232.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Electronically stimulated degradation of crystalline silicon solar cells
AU - Schmidt, J.
AU - Bothe, K.
AU - Macdonald, D.
AU - Adey, J.
AU - Jones, R.
AU - Palmer, D. W.
PY - 2005
Y1 - 2005
N2 - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
AB - Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light is a frequently observed phenomenon. Two main causes of such degradation effects have been identified in the past, both of them being electronically driven and both related to the most common acceptor element, boron, in silicon: (i) the dissociation of iron-boron pairs and (ii) the formation of recombination-active boron-oxygen complexes. While the first mechanism is particularly relevant in metal-contaminated solar-grade multicrystalline silicon materials, the latter process is important in monocrystalline Czochralski-grown silicon, rich in oxygen. This paper starts with a short review of the characteristic features of the two processes. We then briefly address the effect of iron-boron dissociation on solar cell parameters. Regarding the boron-oxygen-related degradation, the current status of the physical understanding of the defect formation process and the defect structure are presented. Finally, we discuss different strategies for effectively avoiding the degradation.
UR - http://www.scopus.com/inward/record.url?scp=30644476748&partnerID=8YFLogxK
U2 - 10.1557/proc-864-e6.1
DO - 10.1557/proc-864-e6.1
M3 - Conference article
AN - SCOPUS:30644476748
VL - 864
SP - 221
EP - 232
JO - Materials Research Society Symposium Proceedings
JF - Materials Research Society Symposium Proceedings
SN - 0272-9172
M1 - E6.1
T2 - 2005 materials Research Society Spring Meeting
Y2 - 28 March 2005 through 1 April 2005
ER -