Details
| Original language | English |
|---|---|
| Article number | 013701 |
| Journal | Journal of applied physics |
| Volume | 99 |
| Issue number | 1 |
| Publication status | Published - 2006 |
| Externally published | Yes |
Abstract
Two different boron- and oxygen-related recombination centers are found to be activated in crystalline silicon under illumination or electron injection in the dark, both leading to a severe degradation in the carrier lifetime. While one center forms on a time scale of seconds to minutes, the formation of the second center typically proceeds within hours. In order to reveal the electronic and microscopic properties of both defect centers as well as their formation and annihilation kinetics, we perform time-resolved lifetime measurements on silicon wafers and open-circuit voltage measurements on silicon solar cells at various temperatures. Despite the fact that the two centers are found to form independently of each other, their concentrations exhibit the same linear dependence on the substitutional boron (Bs) and quadratic dependence on the interstitial oxygen (Oi) content. Our results suggest that the fast- and the slowly forming recombination centers correspond to two different configurations of a Bs O2i complex.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- General Physics and Astronomy
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In: Journal of applied physics, Vol. 99, No. 1, 013701, 2006.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electronically activated boron-oxygen-related recombination centers in crystalline silicon
AU - Bothe, Karsten
AU - Schmidt, Jan
N1 - Funding Information: The authors wish to thank D.W. Palmer for stimulating and informative discussions and R. Brendel for his continuous support and encouragement. S. W. Glunz is acknowledged for providing PERL silicon solar cells with different base doping concentrations and M. Heuer as well as M. Steinhof for sample preparation and solar cell processing. Funding was provided by the State of Lower Saxony and the German Ministry of Education and Research (BMBF) under Contract No. 01SF0009. The ISFH is a member of the German Forschungsverbund Sonnenenergie (FVS).
PY - 2006
Y1 - 2006
N2 - Two different boron- and oxygen-related recombination centers are found to be activated in crystalline silicon under illumination or electron injection in the dark, both leading to a severe degradation in the carrier lifetime. While one center forms on a time scale of seconds to minutes, the formation of the second center typically proceeds within hours. In order to reveal the electronic and microscopic properties of both defect centers as well as their formation and annihilation kinetics, we perform time-resolved lifetime measurements on silicon wafers and open-circuit voltage measurements on silicon solar cells at various temperatures. Despite the fact that the two centers are found to form independently of each other, their concentrations exhibit the same linear dependence on the substitutional boron (Bs) and quadratic dependence on the interstitial oxygen (Oi) content. Our results suggest that the fast- and the slowly forming recombination centers correspond to two different configurations of a Bs O2i complex.
AB - Two different boron- and oxygen-related recombination centers are found to be activated in crystalline silicon under illumination or electron injection in the dark, both leading to a severe degradation in the carrier lifetime. While one center forms on a time scale of seconds to minutes, the formation of the second center typically proceeds within hours. In order to reveal the electronic and microscopic properties of both defect centers as well as their formation and annihilation kinetics, we perform time-resolved lifetime measurements on silicon wafers and open-circuit voltage measurements on silicon solar cells at various temperatures. Despite the fact that the two centers are found to form independently of each other, their concentrations exhibit the same linear dependence on the substitutional boron (Bs) and quadratic dependence on the interstitial oxygen (Oi) content. Our results suggest that the fast- and the slowly forming recombination centers correspond to two different configurations of a Bs O2i complex.
UR - http://www.scopus.com/inward/record.url?scp=30844465492&partnerID=8YFLogxK
U2 - 10.1063/1.2140584
DO - 10.1063/1.2140584
M3 - Article
AN - SCOPUS:30844465492
VL - 99
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 1
M1 - 013701
ER -