Details
| Original language | English |
|---|---|
| Pages (from-to) | 2382-2384 |
| Number of pages | 3 |
| Journal | Microelectronic engineering |
| Volume | 85 |
| Issue number | 12 |
| Early online date | 12 Sept 2008 |
| Publication status | Published - Dec 2008 |
Abstract
The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.
Keywords
- Band alignment, Bandgap width, Insulator, Nanocrystals
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy(all)
- Condensed Matter Physics
- Materials Science(all)
- Surfaces, Coatings and Films
- Engineering(all)
- Electrical and Electronic Engineering
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In: Microelectronic engineering, Vol. 85, No. 12, 12.2008, p. 2382-2384.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals
AU - Badylevich, M.
AU - Shamuilia, S.
AU - Afanas'ev, V. V.
AU - Stesmans, A.
AU - Laha, A.
AU - Osten, H. J.
AU - Fissel, A.
N1 - Funding Information: The work done at the KU Leuven was supported by the Fonds voor Wetenschappelijk Onderzoek (FWO) – Vlaanderen through Grant No. 1.5.057.07.
PY - 2008/12
Y1 - 2008/12
N2 - The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.
AB - The electronic structure of silicon nanocrystals (∼2-6 nm in size) embedded in cubic Gd2O3 epi-layers grown on (1 1 1) Si was analyzed using spectroscopic ellipsometry and photocharging methods. With decreasing nanocrystal size down to the 2 nm range, the optical absorption exhibits a spectacular shift in spectral threshold to 2.9 ± 0.1 eV, as compared to the 1.12 eV absorption edge of the bulk Si crystal. This shift suggests a significant influence of quantum confinement on the Si nanocrystal/oxide interface band diagram, which effect is shown to be predominantly caused by an upshift of the nanocrystal conduction band.
KW - Band alignment
KW - Bandgap width
KW - Insulator
KW - Nanocrystals
UR - http://www.scopus.com/inward/record.url?scp=56649094381&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2008.09.002
DO - 10.1016/j.mee.2008.09.002
M3 - Article
AN - SCOPUS:56649094381
VL - 85
SP - 2382
EP - 2384
JO - Microelectronic engineering
JF - Microelectronic engineering
SN - 0167-9317
IS - 12
ER -