Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well

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Original languageEnglish
Article number67010
Journalepl
Volume96
Issue number6
Publication statusPublished - 6 Dec 2011

Abstract

We show that a fast electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells is governed by the presence of excitons at low temperatures and intermediate excitation densities. The electron loses its spin orientation within an exciton due to the long-range part of the exciton anisotropic spin exchange interaction and unveils excitonic signatures within the many particle electron-hole system. The temperature-dependent time- and polarization-resolved photoluminescence measurements span five decades of carrier density, comprise the transition from localized excitons over quasi-free excitons to an electron-hole plasma, and reveal strong excitonic signatures even at relatively high densities and temperatures.

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Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well. / Oertel, S.; Kunz, S.; Schuh, D. et al.
In: epl, Vol. 96, No. 6, 67010, 06.12.2011.

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Oertel S, Kunz S, Schuh D, Wegscheider W, Hübner J, Oestreich M. Electron spin relaxation as tracer of excitons in a two-dimensional electron-hole plasma inside a (110)-GaAs quantum well. epl. 2011 Dec 6;96(6):67010. doi: 10.1209/0295-5075/96/67010
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AU - Oertel, S.

AU - Kunz, S.

AU - Schuh, D.

AU - Wegscheider, W.

AU - Hübner, Jens

AU - Oestreich, Michael

PY - 2011/12/6

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