Details
| Original language | English |
|---|---|
| Title of host publication | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| ISBN (electronic) | 9781424416417 |
| Publication status | Published - 2008 |
| Externally published | Yes |
| Event | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
Islands and line networks of aluminum-doped p+ regions formed in a conventional screen-printing process are investigated by a combination of different techniques. To characterize the microscopic nature of the islands (lateral dimensions 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension ≤ 50 nm) advanced transmission electron microscopy (TEM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM) and energy dispersive X-ray analysis (EDX) are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystallographic aluminum precipitates of ≪ 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension ∼30 nm) are found within the bulk of the self-assembled line networks. Our findings provide clear experimental evidence that the concentration peak generally measured at the surface of screen-printed Al-p + regions is due to the microscopic structures formed on the silicon surface during the firing process.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922485 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Electron microscopy analysis of silicon islands and line structures formed on screen-printed Al-doped p+-surfaces
AU - Bock, Robert
AU - Schmidt, Jan
AU - Brendel, Rolf
AU - Schuhmann, Henning
AU - Seibt, Michael
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under Contract No. 0327666.
PY - 2008
Y1 - 2008
N2 - Islands and line networks of aluminum-doped p+ regions formed in a conventional screen-printing process are investigated by a combination of different techniques. To characterize the microscopic nature of the islands (lateral dimensions 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension ≤ 50 nm) advanced transmission electron microscopy (TEM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM) and energy dispersive X-ray analysis (EDX) are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystallographic aluminum precipitates of ≪ 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension ∼30 nm) are found within the bulk of the self-assembled line networks. Our findings provide clear experimental evidence that the concentration peak generally measured at the surface of screen-printed Al-p + regions is due to the microscopic structures formed on the silicon surface during the firing process.
AB - Islands and line networks of aluminum-doped p+ regions formed in a conventional screen-printing process are investigated by a combination of different techniques. To characterize the microscopic nature of the islands (lateral dimensions 1-3 μm) and line networks of self-assembled nanostructures (lateral dimension ≤ 50 nm) advanced transmission electron microscopy (TEM), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM) and energy dispersive X-ray analysis (EDX) are combined. Aluminum inclusions are detected 50 nm below the surface of the islands and crystallographic aluminum precipitates of ≪ 7 nm in diameter are found within the bulk of the islands. In addition, aluminum inclusions (lateral dimension ∼30 nm) are found within the bulk of the self-assembled line networks. Our findings provide clear experimental evidence that the concentration peak generally measured at the surface of screen-printed Al-p + regions is due to the microscopic structures formed on the silicon surface during the firing process.
UR - http://www.scopus.com/inward/record.url?scp=84879705168&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922485
DO - 10.1109/PVSC.2008.4922485
M3 - Conference contribution
AN - SCOPUS:84879705168
SN - 978-1-4244-1640-0
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -