Electromigration-induced directional steps towards the formation of single atomic Ag contacts

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Original languageEnglish
Article number55
Pages (from-to)680-687
Number of pages8
JournalBeilstein Journal of Nanotechnology
Volume11
Publication statusPublished - 22 Apr 2020

Abstract

Even though there have been many experimental attempts and theoretical approaches to understand the process of electromigration (EM), it has not been quantitatively understood for ultrathin structures and at grain boundaries. Nevertheless, we showed recently that it can be used reliably for the formation of single atomic point contacts after careful pre-structuring of the initial Ag nanostructures. The process of formation of nanocontacts by EM down to a single-atom point contact was investigated for ultrathin (5 nm) Ag structures at 100 K by measuring the conductance as a function of the time during EM. In this paper, we compare the process of thinning by EM of structures with constrictions below the average grain size of Ag layers (15 nm) with that of structures with much larger initial constrictions of around 150 nm having multiple grains at the centre constriction prior to the formation of a point contact. Even though clear morphological differences exist between both types of structures, quantized conductance plateaus showing the formation of single point contacts have been observed for both. Here we put emphasis on the thinning process by EM, just before a point contact is formed. To understand this thinning process, the semi-classical regime before the contact reaches the quantum regime was analyzed in detail. For this purpose, we used experimental conductance histograms in the range between 2G0 and 15G0 and their corresponding Fourier transforms (FTs). The FT analysis of the conductance histograms exhibits a clear preference for thinning along the [100] direction. Using well-established models, both atom-by-atom steps and ranges of stability, presumably caused by electronic shell effects, can be discriminated. Although the directional motion of atoms during EM leads to specific properties such as the instabilities mentioned, similarities to mechanically opened contacts with respect to cross-sectional stability were found.

Keywords

    Electromigration, Focussed ion beam, Nanostructures, Si substrate, Silver

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Electromigration-induced directional steps towards the formation of single atomic Ag contacts. / Chatterjee, Atasi; Tegenkamp, Christoph; Pfnür, Herbert.
In: Beilstein Journal of Nanotechnology, Vol. 11, 55, 22.04.2020, p. 680-687.

Research output: Contribution to journalArticleResearchpeer review

Chatterjee A, Tegenkamp C, Pfnür H. Electromigration-induced directional steps towards the formation of single atomic Ag contacts. Beilstein Journal of Nanotechnology. 2020 Apr 22;11:680-687. 55. doi: 10.3762/bjnano.11.55, 10.3762/bjnano.11.55
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@article{6b6b341f0e7e46f1a396392895d890e4,
title = "Electromigration-induced directional steps towards the formation of single atomic Ag contacts",
abstract = "Even though there have been many experimental attempts and theoretical approaches to understand the process of electromigration (EM), it has not been quantitatively understood for ultrathin structures and at grain boundaries. Nevertheless, we showed recently that it can be used reliably for the formation of single atomic point contacts after careful pre-structuring of the initial Ag nanostructures. The process of formation of nanocontacts by EM down to a single-atom point contact was investigated for ultrathin (5 nm) Ag structures at 100 K by measuring the conductance as a function of the time during EM. In this paper, we compare the process of thinning by EM of structures with constrictions below the average grain size of Ag layers (15 nm) with that of structures with much larger initial constrictions of around 150 nm having multiple grains at the centre constriction prior to the formation of a point contact. Even though clear morphological differences exist between both types of structures, quantized conductance plateaus showing the formation of single point contacts have been observed for both. Here we put emphasis on the thinning process by EM, just before a point contact is formed. To understand this thinning process, the semi-classical regime before the contact reaches the quantum regime was analyzed in detail. For this purpose, we used experimental conductance histograms in the range between 2G0 and 15G0 and their corresponding Fourier transforms (FTs). The FT analysis of the conductance histograms exhibits a clear preference for thinning along the [100] direction. Using well-established models, both atom-by-atom steps and ranges of stability, presumably caused by electronic shell effects, can be discriminated. Although the directional motion of atoms during EM leads to specific properties such as the instabilities mentioned, similarities to mechanically opened contacts with respect to cross-sectional stability were found.",
keywords = "Electromigration, Focussed ion beam, Nanostructures, Si substrate, Silver",
author = "Atasi Chatterjee and Christoph Tegenkamp and Herbert Pfn{\"u}r",
note = "Funding information: We acknowledge financial support by the Hannover School of Nanotechnology (HSN).",
year = "2020",
month = apr,
day = "22",
doi = "10.3762/bjnano.11.55",
language = "English",
volume = "11",
pages = "680--687",
journal = "Beilstein Journal of Nanotechnology",
issn = "2190-4286",
publisher = "Beilstein-Institut Zur Forderung der Chemischen Wissenschaften",

}

Download

TY - JOUR

T1 - Electromigration-induced directional steps towards the formation of single atomic Ag contacts

AU - Chatterjee, Atasi

AU - Tegenkamp, Christoph

AU - Pfnür, Herbert

N1 - Funding information: We acknowledge financial support by the Hannover School of Nanotechnology (HSN).

PY - 2020/4/22

Y1 - 2020/4/22

N2 - Even though there have been many experimental attempts and theoretical approaches to understand the process of electromigration (EM), it has not been quantitatively understood for ultrathin structures and at grain boundaries. Nevertheless, we showed recently that it can be used reliably for the formation of single atomic point contacts after careful pre-structuring of the initial Ag nanostructures. The process of formation of nanocontacts by EM down to a single-atom point contact was investigated for ultrathin (5 nm) Ag structures at 100 K by measuring the conductance as a function of the time during EM. In this paper, we compare the process of thinning by EM of structures with constrictions below the average grain size of Ag layers (15 nm) with that of structures with much larger initial constrictions of around 150 nm having multiple grains at the centre constriction prior to the formation of a point contact. Even though clear morphological differences exist between both types of structures, quantized conductance plateaus showing the formation of single point contacts have been observed for both. Here we put emphasis on the thinning process by EM, just before a point contact is formed. To understand this thinning process, the semi-classical regime before the contact reaches the quantum regime was analyzed in detail. For this purpose, we used experimental conductance histograms in the range between 2G0 and 15G0 and their corresponding Fourier transforms (FTs). The FT analysis of the conductance histograms exhibits a clear preference for thinning along the [100] direction. Using well-established models, both atom-by-atom steps and ranges of stability, presumably caused by electronic shell effects, can be discriminated. Although the directional motion of atoms during EM leads to specific properties such as the instabilities mentioned, similarities to mechanically opened contacts with respect to cross-sectional stability were found.

AB - Even though there have been many experimental attempts and theoretical approaches to understand the process of electromigration (EM), it has not been quantitatively understood for ultrathin structures and at grain boundaries. Nevertheless, we showed recently that it can be used reliably for the formation of single atomic point contacts after careful pre-structuring of the initial Ag nanostructures. The process of formation of nanocontacts by EM down to a single-atom point contact was investigated for ultrathin (5 nm) Ag structures at 100 K by measuring the conductance as a function of the time during EM. In this paper, we compare the process of thinning by EM of structures with constrictions below the average grain size of Ag layers (15 nm) with that of structures with much larger initial constrictions of around 150 nm having multiple grains at the centre constriction prior to the formation of a point contact. Even though clear morphological differences exist between both types of structures, quantized conductance plateaus showing the formation of single point contacts have been observed for both. Here we put emphasis on the thinning process by EM, just before a point contact is formed. To understand this thinning process, the semi-classical regime before the contact reaches the quantum regime was analyzed in detail. For this purpose, we used experimental conductance histograms in the range between 2G0 and 15G0 and their corresponding Fourier transforms (FTs). The FT analysis of the conductance histograms exhibits a clear preference for thinning along the [100] direction. Using well-established models, both atom-by-atom steps and ranges of stability, presumably caused by electronic shell effects, can be discriminated. Although the directional motion of atoms during EM leads to specific properties such as the instabilities mentioned, similarities to mechanically opened contacts with respect to cross-sectional stability were found.

KW - Electromigration

KW - Focussed ion beam

KW - Nanostructures

KW - Si substrate

KW - Silver

UR - http://www.scopus.com/inward/record.url?scp=85085246633&partnerID=8YFLogxK

U2 - 10.3762/bjnano.11.55

DO - 10.3762/bjnano.11.55

M3 - Article

C2 - 32395398

AN - SCOPUS:85085246633

VL - 11

SP - 680

EP - 687

JO - Beilstein Journal of Nanotechnology

JF - Beilstein Journal of Nanotechnology

SN - 2190-4286

M1 - 55

ER -

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