Details
| Original language | English |
|---|---|
| Article number | 2400067 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 261 |
| Issue number | 11 |
| Early online date | 16 Apr 2024 |
| Publication status | Published - Nov 2024 |
| Externally published | Yes |
Abstract
Dopant-selective electrochemical etching (ECE) of gallium nitride (GaN) results in well-defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent rapid thermal annealing (RTA) on the porosification process of highly n-doped GaN ([Si] 3 × 1019 cm−3) is investigated. Implantation is expected to compensate the donors of the n-GaN layer to spatially suppress porosification during ECE. Optical transmission, electrochemical capacitance–voltage, and X-Ray diffractometry of as-grown and as-implanted GaN suggest successful compensation of n-dopants. Cross-sectional scanning electron microscopy reveals the presence of mesopores (diameter 2–50 nm) after ECE of the as-grown n-GaN. In the case of implanted n-GaN, it is found that ECE results in macropores (diameter > 50 nm), which can be suppressed by an intermediate RTA step. The implanted and annealed n-GaN layers solely exhibit mesopores at the top and bottom, while the intermediate region remains unimpaired. Chronoamperometry and gravimetry provide additional insight and confirm the presence of macro- and mesopores in samples without and with RTA, respectively. The results demonstrate a successful implementation of etch-resisting subsurface layers, which are required for 3D refractive index engineering in porous GaN.
Keywords
- electrochemical capacitance–voltage depth profiling, electrochemical etching, ion implantation, porous gallium nitride, rapid thermal annealing
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi (B) Basic Research, Vol. 261, No. 11, 2400067, 11.2024.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electrochemical Etching of Nitrogen Ion-Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning
AU - Hoormann, Matthias
AU - Lüßmann, Frederik
AU - Margenfeld, Christoph
AU - Ronning, Carsten
AU - Meierhofer, Florian
AU - Waag, Andreas
N1 - Publisher Copyright: © 2024 The Authors. physica status solidi (b) basic solid state physics published by Wiley-VCH GmbH.
PY - 2024/11
Y1 - 2024/11
N2 - Dopant-selective electrochemical etching (ECE) of gallium nitride (GaN) results in well-defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent rapid thermal annealing (RTA) on the porosification process of highly n-doped GaN ([Si] 3 × 1019 cm−3) is investigated. Implantation is expected to compensate the donors of the n-GaN layer to spatially suppress porosification during ECE. Optical transmission, electrochemical capacitance–voltage, and X-Ray diffractometry of as-grown and as-implanted GaN suggest successful compensation of n-dopants. Cross-sectional scanning electron microscopy reveals the presence of mesopores (diameter 2–50 nm) after ECE of the as-grown n-GaN. In the case of implanted n-GaN, it is found that ECE results in macropores (diameter > 50 nm), which can be suppressed by an intermediate RTA step. The implanted and annealed n-GaN layers solely exhibit mesopores at the top and bottom, while the intermediate region remains unimpaired. Chronoamperometry and gravimetry provide additional insight and confirm the presence of macro- and mesopores in samples without and with RTA, respectively. The results demonstrate a successful implementation of etch-resisting subsurface layers, which are required for 3D refractive index engineering in porous GaN.
AB - Dopant-selective electrochemical etching (ECE) of gallium nitride (GaN) results in well-defined porous layers with tunable refractive index, which is extremely interesting for integrating photonic components into nitride technology. Herein, the impact of nitrogen implantation with and without subsequent rapid thermal annealing (RTA) on the porosification process of highly n-doped GaN ([Si] 3 × 1019 cm−3) is investigated. Implantation is expected to compensate the donors of the n-GaN layer to spatially suppress porosification during ECE. Optical transmission, electrochemical capacitance–voltage, and X-Ray diffractometry of as-grown and as-implanted GaN suggest successful compensation of n-dopants. Cross-sectional scanning electron microscopy reveals the presence of mesopores (diameter 2–50 nm) after ECE of the as-grown n-GaN. In the case of implanted n-GaN, it is found that ECE results in macropores (diameter > 50 nm), which can be suppressed by an intermediate RTA step. The implanted and annealed n-GaN layers solely exhibit mesopores at the top and bottom, while the intermediate region remains unimpaired. Chronoamperometry and gravimetry provide additional insight and confirm the presence of macro- and mesopores in samples without and with RTA, respectively. The results demonstrate a successful implementation of etch-resisting subsurface layers, which are required for 3D refractive index engineering in porous GaN.
KW - electrochemical capacitance–voltage depth profiling
KW - electrochemical etching
KW - ion implantation
KW - porous gallium nitride
KW - rapid thermal annealing
UR - http://www.scopus.com/inward/record.url?scp=85190366314&partnerID=8YFLogxK
U2 - 10.1002/pssb.202400067
DO - 10.1002/pssb.202400067
M3 - Article
AN - SCOPUS:85190366314
VL - 261
JO - Physica Status Solidi (B) Basic Research
JF - Physica Status Solidi (B) Basic Research
SN - 0370-1972
IS - 11
M1 - 2400067
ER -