Electric-field domains in semiconductor superlattices: A novel system for tunneling between 2D systems

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  • Max Planck Institute for Solid State Research (MPI-FKF)
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Original languageEnglish
Pages (from-to)1618-1621
Number of pages4
JournalPhysical review letters
Volume67
Issue number12
Publication statusPublished - 1 Jan 1991
Externally publishedYes

Abstract

The boundary between electric-field domains in semiconductor superlattices represents a tunneling barrier. While most of the superlattice is coupled resonantly the current through the superlattice is limited by nonresonant tunneling at the domain boundary. The emitter and collector are purely two dimensional and the system therefore acts as a model system for tunneling between 2D systems. For magnetic fields applied parallel to the layers the average current through the single barrier increases, in contrast to 3D and quasi-2D emitters.

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Electric-field domains in semiconductor superlattices: A novel system for tunneling between 2D systems. / Grahn, H. T.; Haug, R. J.; Müller, W. et al.
In: Physical review letters, Vol. 67, No. 12, 01.01.1991, p. 1618-1621.

Research output: Contribution to journalArticleResearchpeer review

Grahn HT, Haug RJ, Müller W, Ploog K. Electric-field domains in semiconductor superlattices: A novel system for tunneling between 2D systems. Physical review letters. 1991 Jan 1;67(12):1618-1621. doi: 10.1103/PhysRevLett.67.1618
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