Details
| Original language | English |
|---|---|
| Pages (from-to) | 39913-39916 |
| Number of pages | 4 |
| Journal | ACS Omega |
| Volume | 7 |
| Issue number | 44 |
| Early online date | 25 Oct 2022 |
| Publication status | Published - 8 Nov 2022 |
Abstract
Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
ASJC Scopus subject areas
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: ACS Omega, Vol. 7, No. 44, 08.11.2022, p. 39913-39916.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electrical Properties of Thin ZrSe3Films for Device Applications
AU - Thole, Lars
AU - Belke, Christopher
AU - Locmelis, Sonja
AU - Behrens, Peter
AU - Haug, Rolf J.
N1 - Funding Information: This work was funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy─EXC 2123 Quantum Frontiers─390837967 and EXC 2122 PhoenixD─390833453 and within the Priority Program SPP 2244 “2DMP”. The authors thank Marcel Schulz for providing help with the Raman measurements and Adrian Hannebauer for help with further measurements.
PY - 2022/11/8
Y1 - 2022/11/8
N2 - Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
AB - Measurements of key properties of the two-dimensional transition metal trichalcogenide ZrSe3are reported. The bulk material was created by chemical vapor deposition and subsequently exfoliated to obtain thin films of varying thicknesses. The samples were then characterized by atomic force microscopy measurements and Raman spectroscopy and contacted by e-beam lithography. Electrical measurements give values for the band gap energy of 0.6 eV increasing for thinner samples. Transistor measurements show ZrSe3to be an n-type semiconductor. By looking at several samples with varying thicknesses, it was possible to determine a mean free path of 103 nm for the bulk material which opens the possibility for new electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85141369817&partnerID=8YFLogxK
U2 - 10.1021/acsomega.2c04198
DO - 10.1021/acsomega.2c04198
M3 - Article
AN - SCOPUS:85141369817
VL - 7
SP - 39913
EP - 39916
JO - ACS Omega
JF - ACS Omega
IS - 44
ER -