Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors

Research output: Contribution to conference › Paper › Research › peer review

Authors

  • I. M. Anteney
  • G. Lippert
  • P. Ashburn
  • H. J. Osten
  • B. Heinemann
  • G. J. Parker

External Research Organisations

  • University of Southampton
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Details

Original languageEnglish
Pages55-60
Number of pages6
Publication statusPublished - 1997
Externally publishedYes
Event1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, United Kingdom (UK)
Duration: 24 Nov 1997 → 25 Nov 1997

Conference

Conference1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
Country/TerritoryUnited Kingdom (UK)
CityLondon
Period24 Nov 1997 → 25 Nov 1997

Abstract

In this paper a novel electrical method is described which allows the extraction of bandgap narrowing within the base of SiGe heterojunction bipolar transistors due to heavy doping effects and the presence of germanium. In addition it is shown that the methods sensitivity to doping tails makes it ideal for determining the presence of parasitic energy barriers due to B outdiffusion from the base, a cause of major concern for HBT technology. The analysis is applied to SiGe and SiGeC showing that background carbon incorporation (≈1020 cm-3) completely suppresses TED.

ASJC Scopus subject areas

Cite this

Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. / Anteney, I. M.; Lippert, G.; Ashburn, P. et al.
1997. 55-60 Paper presented at 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, London, United Kingdom (UK).

Research output: Contribution to conference › Paper › Research › peer review

Anteney, IM, Lippert, G, Ashburn, P, Osten, HJ, Heinemann, B & Parker, GJ 1997, 'Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors', Paper presented at 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, London, United Kingdom (UK), 24 Nov 1997 - 25 Nov 1997 pp. 55-60.
Anteney, I. M., Lippert, G., Ashburn, P., Osten, H. J., Heinemann, B., & Parker, G. J. (1997). Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. 55-60. Paper presented at 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, London, United Kingdom (UK).
Anteney IM, Lippert G, Ashburn P, Osten HJ, Heinemann B, Parker GJ. Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. 1997. Paper presented at 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, London, United Kingdom (UK).
Anteney, I. M. ; Lippert, G. ; Ashburn, P. et al. / Electrical determination of bandgap narrowing and parasitic energy barriers in SiGe and SiGeC heterojunction bipolar transistors. Paper presented at 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO, London, United Kingdom (UK).6 p.
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