Details
| Original language | English |
|---|---|
| Article number | 6970768 |
| Pages (from-to) | 166-173 |
| Number of pages | 8 |
| Journal | IEEE journal of photovoltaics |
| Volume | 5 |
| Issue number | 1 |
| Publication status | Published - 1 Jan 2015 |
Abstract
Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
Keywords
- Boron, crystal defects, ion implantation, photovoltaic, rapid thermal annealing (RTA), Silicon
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
Sustainable Development Goals
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In: IEEE journal of photovoltaics, Vol. 5, No. 1, 6970768, 01.01.2015, p. 166-173.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters
AU - Krugener, Jan
AU - Peibst, Robby
AU - Alexander, Wolf
AU - Bugiel, Eberhard
AU - Ohrdes, Tobias
AU - Kiefer, Fabian
AU - Schollhorn, Claus
AU - Grohe, Andreas
AU - Brendel, Rolf
AU - Osten, Hans-Jörg
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).
KW - Boron
KW - crystal defects
KW - ion implantation
KW - photovoltaic
KW - rapid thermal annealing (RTA)
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84919832526&partnerID=8YFLogxK
U2 - 10.1109/jphotov.2014.2365468
DO - 10.1109/jphotov.2014.2365468
M3 - Article
AN - SCOPUS:84919832526
VL - 5
SP - 166
EP - 173
JO - IEEE journal of photovoltaics
JF - IEEE journal of photovoltaics
SN - 2156-3381
IS - 1
M1 - 6970768
ER -