Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters

Research output: Contribution to journalArticleResearchpeer review

Authors

  • Jan Krugener
  • Robby Peibst
  • Wolf Alexander
  • Eberhard Bugiel
  • Tobias Ohrdes
  • Fabian Kiefer
  • Claus Schollhorn
  • Andreas Grohe
  • Rolf Brendel
  • Hans-Jörg Osten

External Research Organisations

  • Institute for Solar Energy Research (ISFH)
  • Robert Bosch GmbH
  • Bosch Solar Energy AG
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Details

Original languageEnglish
Article number6970768
Pages (from-to)166-173
Number of pages8
JournalIEEE journal of photovoltaics
Volume5
Issue number1
Publication statusPublished - 1 Jan 2015

Abstract

Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

Keywords

    Boron, crystal defects, ion implantation, photovoltaic, rapid thermal annealing (RTA), Silicon

ASJC Scopus subject areas

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Cite this

Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters. / Krugener, Jan; Peibst, Robby; Alexander, Wolf et al.
In: IEEE journal of photovoltaics, Vol. 5, No. 1, 6970768, 01.01.2015, p. 166-173.

Research output: Contribution to journalArticleResearchpeer review

Krugener, J, Peibst, R, Alexander, W, Bugiel, E, Ohrdes, T, Kiefer, F, Schollhorn, C, Grohe, A, Brendel, R & Osten, H-J 2015, 'Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters', IEEE journal of photovoltaics, vol. 5, no. 1, 6970768, pp. 166-173. https://doi.org/10.1109/jphotov.2014.2365468
Krugener, J., Peibst, R., Alexander, W., Bugiel, E., Ohrdes, T., Kiefer, F., Schollhorn, C., Grohe, A., Brendel, R., & Osten, H.-J. (2015). Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters. IEEE journal of photovoltaics, 5(1), 166-173. Article 6970768. https://doi.org/10.1109/jphotov.2014.2365468
Krugener J, Peibst R, Alexander W, Bugiel E, Ohrdes T, Kiefer F et al. Electrical and structural analysis of crystal defects after high-temperature rapid thermal annealing of highly boron ion-implanted emitters. IEEE journal of photovoltaics. 2015 Jan 1;5(1):166-173. 6970768. doi: 10.1109/jphotov.2014.2365468
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AU - Krugener, Jan

AU - Peibst, Robby

AU - Alexander, Wolf

AU - Bugiel, Eberhard

AU - Ohrdes, Tobias

AU - Kiefer, Fabian

AU - Schollhorn, Claus

AU - Grohe, Andreas

AU - Brendel, Rolf

AU - Osten, Hans-Jörg

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AB - Ion implantation of boron is a promising technique for the preparation of p-type emitters in n-type cells. We use rapid thermal annealing with temperatures up to 1250 °C and annealing durations between 6 s and 20 min to anneal the implant-induced crystal defects. Experimental J-{0e} is compared with simulated and measured defect densities. Perfect dislocation loops are identified to be the dominating defect species after rapid thermal annealing (RTA) above 1000 °C. Even for emitters with J-{0e} values around 40 fA/cm2, defects are present within the valleys of the textured surfaces after annealing. On textured Al2O3-passivated boron emitters, we measure J-{0e} of 38 fA/cm 2 for a sheet resistance around 80 Ω/□ after very short annealing processes (1 min at 1200 °C).

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