Details
| Original language | English |
|---|---|
| Pages (from-to) | 159-161 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 5 |
| Issue number | 4 |
| Early online date | 18 Mar 2011 |
| Publication status | Published - Apr 2011 |
| Externally published | Yes |
Abstract
We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiNx /SiO2 passivated phosphorus-diffused front surface field. Voc calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high Voc, as known for both-side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell Voc of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture-area efficiency increases from 19.8 ± 0.4% to 20.2 ± 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (
Keywords
- A-Si/c-Si heterojunction, Back-contacts, Solar cells, Wafer-based photovoltaics
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 5, No. 4, 04.2011, p. 159-161.
Research output: Contribution to journal › Letter › Research › peer review
}
TY - JOUR
T1 - Efficient interdigitated back-contacted silicon heterojunction solar cells
AU - Mingirulli, Nicola
AU - Haschke, Jan
AU - Gogolin, Ralf
AU - Ferré, Rafel
AU - Schulze, Tim F.
AU - Düsterhöft, J.
AU - Harder, Nils Peter
AU - Korte, Lars
AU - Brendel, Rolf
AU - Rech, Bernd
N1 - Funding Information: We gratefully acknowledge the fi-nancial support of this work by the German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (grant numbers 0325114A and 0325114B) and by our industrial partners Robert Bosch GmbH, Schott Solar AG, Stiebel Eltron GmbH & Co. KG and Sunways AG in this joint work. H. Angermann is acknowledged for collaboration. The authors thank S. Mau, E. Conrad, K. Jacob and A. Scheu for supporting solar cell fabri-cation and T. Hänel and M. Wolf for support in characterization.
PY - 2011/4
Y1 - 2011/4
N2 - We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiNx /SiO2 passivated phosphorus-diffused front surface field. Voc calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high Voc, as known for both-side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell Voc of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture-area efficiency increases from 19.8 ± 0.4% to 20.2 ± 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (
AB - We present back-contacted amorphous/crystalline silicon heterojunction solar cells (IBC-SHJ) on n-type substrates with fill factors exceeding 78% and high current densities, the latter enabled by a SiNx /SiO2 passivated phosphorus-diffused front surface field. Voc calculations based on carrier lifetime data of reference samples indicate that for the IBC architecture and the given amorphous silicon layer qualities an emitter buffer layer is crucial to reach a high Voc, as known for both-side contacted silicon heterojunction solar cells. A back surface field buffer layer has a minor influence. We observe a boost in solar cell Voc of 40 mV and a simultaneous fill factor reduction introducing the buffer layer. The aperture-area efficiency increases from 19.8 ± 0.4% to 20.2 ± 0.4%. Both, efficiencies and fill factors constitute a significant improvement over previously reported values. (
KW - A-Si/c-Si heterojunction
KW - Back-contacts
KW - Solar cells
KW - Wafer-based photovoltaics
UR - http://www.scopus.com/inward/record.url?scp=79954466929&partnerID=8YFLogxK
U2 - 10.1002/pssr.201105056
DO - 10.1002/pssr.201105056
M3 - Letter
AN - SCOPUS:79954466929
VL - 5
SP - 159
EP - 161
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 4
ER -