Details
| Original language | English |
|---|---|
| Pages (from-to) | 521-524 |
| Number of pages | 4 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | 1998 International Conference on Indium Phosphide and Related Materials - Tsukuba, Japan Duration: 11 May 1998 → 15 May 1998 |
Abstract
Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Engineering(all)
- Electrical and Electronic Engineering
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In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1998, p. 521-524.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Efficiency of photoluminescence up-conversion at (Al0.5Ga0.5)0.5In0.5P and GaAs heterointerface
AU - Yamashita, Kenichi
AU - Kita, Takashi
AU - Nishino, Taneo
AU - Oestreich, Michael
PY - 1998
Y1 - 1998
N2 - Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
AB - Up-converted photoluminescence (UPL) signal of long-range ordered (Al0.5Ga0.5)0.5In0.5P/GaAs(001) was observed around 2.18 eV at 11 K. Excitation-power dependence of the intensity obeys a power law with a slope 1.3. The power of slope is the same as that of normal photoluminescence (NPL) intensity. On the other hand, the NPL intensity measured at an elevated temperature shows a linear response. These results suggest that the low temperature UPL depends on carrier-localization properties. Time-resolved UPL measurements show a steep rise at the higher energy side and a slow rise at the lower energy side. This result reveals a relaxation process of the photoexcited carriers from higher lying states to lower lying states.
UR - http://www.scopus.com/inward/record.url?scp=0032288096&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:0032288096
SP - 521
EP - 524
JO - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
JF - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SN - 1092-8669
T2 - 1998 International Conference on Indium Phosphide and Related Materials
Y2 - 11 May 1998 through 15 May 1998
ER -