Details
| Original language | English |
|---|---|
| Pages (from-to) | 111-115 |
| Number of pages | 5 |
| Journal | Advances in Radio Science |
| Volume | 12 |
| Publication status | Published - 10 Nov 2014 |
| Externally published | Yes |
Abstract
Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. This leads especially at a high input voltage to a decreasing efficiency caused by switching losses. Conventional calculations are not suitable to predict the efficiency as parasitic capacitances have a significant loss contribution. This paper presents an analytical efficiency model which considers parasitic capacitances separately and calculates the power loss contribution of each capacitance to any resistive element. The proposed model is utilized for efficiency optimization of converters with switching frequencies > 10 MHz and input voltages up to 40 V. For experimental evaluation a DCDC converter was manufactured in a 180 nm HV BiCMOS technology. The model matches a transistor level simulation and measurement results with an accuracy better than 3.5 %. The accuracy of the parasitic capacitances of the high voltage transistor determines the overall accuracy of the efficiency model. Experimental capacitor measurements can be fed into the model. Based on the model, different architectures have been studied.
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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In: Advances in Radio Science, Vol. 12, 10.11.2014, p. 111-115.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Efficiency modeling for MHz DCDC converters at 40 v input voltage range
AU - Wittmann, J.
AU - Seidel, A.
AU - Wicht, B.
N1 - Publisher Copyright: © 2014 Author.
PY - 2014/11/10
Y1 - 2014/11/10
N2 - Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. This leads especially at a high input voltage to a decreasing efficiency caused by switching losses. Conventional calculations are not suitable to predict the efficiency as parasitic capacitances have a significant loss contribution. This paper presents an analytical efficiency model which considers parasitic capacitances separately and calculates the power loss contribution of each capacitance to any resistive element. The proposed model is utilized for efficiency optimization of converters with switching frequencies > 10 MHz and input voltages up to 40 V. For experimental evaluation a DCDC converter was manufactured in a 180 nm HV BiCMOS technology. The model matches a transistor level simulation and measurement results with an accuracy better than 3.5 %. The accuracy of the parasitic capacitances of the high voltage transistor determines the overall accuracy of the efficiency model. Experimental capacitor measurements can be fed into the model. Based on the model, different architectures have been studied.
AB - Size and cost of a switched mode power supply can be reduced by increasing the switching frequency. This leads especially at a high input voltage to a decreasing efficiency caused by switching losses. Conventional calculations are not suitable to predict the efficiency as parasitic capacitances have a significant loss contribution. This paper presents an analytical efficiency model which considers parasitic capacitances separately and calculates the power loss contribution of each capacitance to any resistive element. The proposed model is utilized for efficiency optimization of converters with switching frequencies > 10 MHz and input voltages up to 40 V. For experimental evaluation a DCDC converter was manufactured in a 180 nm HV BiCMOS technology. The model matches a transistor level simulation and measurement results with an accuracy better than 3.5 %. The accuracy of the parasitic capacitances of the high voltage transistor determines the overall accuracy of the efficiency model. Experimental capacitor measurements can be fed into the model. Based on the model, different architectures have been studied.
UR - http://www.scopus.com/inward/record.url?scp=84914708902&partnerID=8YFLogxK
U2 - 10.5194/ars-12-111-2014
DO - 10.5194/ars-12-111-2014
M3 - Article
AN - SCOPUS:84914708902
VL - 12
SP - 111
EP - 115
JO - Advances in Radio Science
JF - Advances in Radio Science
SN - 1684-9965
ER -