Details
| Original language | English |
|---|---|
| Title of host publication | IEEE PES APPEEC 2016 - 2016 IEEE PES Asia Pacific Power and Energy Engineering Conference |
| Pages | 634-639 |
| Number of pages | 6 |
| ISBN (electronic) | 9781509054183 |
| Publication status | Published - 9 Dec 2016 |
Publication series
| Name | Asia-Pacific Power and Energy Engineering Conference, APPEEC |
|---|---|
| Volume | 2016-December |
| ISSN (Print) | 2157-4839 |
| ISSN (electronic) | 2157-4847 |
Abstract
This contribution investigates the influence of SiC semiconductor devices for HVDC transmission technology on system level. Different SiC devices are recently in the focus of many scientific publications. However, for extra high power applications, the SiC-JFET exhibits promising properties. In order to assess the impact on system losses of such a new technology, a scenario of a large-scale meshed HVDC offshore power system using the CIGRE B4 DC Grid Test System is investigated. In contrast to classical approaches for power flow calculations, detailed representation of semi-conductor based power electronic converters is necessary if the impact of evolving module technologies is to be analyzed. Therefore, this contribution will introduce an efficient way to solve the load flow problem for hybrid AC/DC systems with a detailed and accurate loss representation for converter stations. First, the converter station loss model is derived based on power electronic device characteristics of the IGBT and associated data of standard modules for this application. Second, the hybrid power flow approach is described using a parallel solution of the AC and the DC system with a combined Jacobian. Third, synthetic SiC-JFET characteristics are used in order to compare the performance in terms of efficiency at different loadings of the converter stations. It is shown that SiC-JFETs can significantly reduce losses of the system and almost eliminate switching losses (no-load losses) of converters, which is especially relevant at low utilizations with high occurrence considering the fluctuating nature of offshore wind power.
Keywords
- IGBT losses, SiC, hvdc, load flow, multi-terminal
ASJC Scopus subject areas
- Energy(all)
- Energy Engineering and Power Technology
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IEEE PES APPEEC 2016 - 2016 IEEE PES Asia Pacific Power and Energy Engineering Conference. 2016. p. 634-639 7779581 (Asia-Pacific Power and Energy Engineering Conference, APPEEC; Vol. 2016-December).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Efficiency evaluation of offshore power systems with power electronics based on SiC technology
AU - Hennig, T.
AU - Mende, D.
AU - Hofmann, L.
N1 - Publisher Copyright: © 2016 IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2016/12/9
Y1 - 2016/12/9
N2 - This contribution investigates the influence of SiC semiconductor devices for HVDC transmission technology on system level. Different SiC devices are recently in the focus of many scientific publications. However, for extra high power applications, the SiC-JFET exhibits promising properties. In order to assess the impact on system losses of such a new technology, a scenario of a large-scale meshed HVDC offshore power system using the CIGRE B4 DC Grid Test System is investigated. In contrast to classical approaches for power flow calculations, detailed representation of semi-conductor based power electronic converters is necessary if the impact of evolving module technologies is to be analyzed. Therefore, this contribution will introduce an efficient way to solve the load flow problem for hybrid AC/DC systems with a detailed and accurate loss representation for converter stations. First, the converter station loss model is derived based on power electronic device characteristics of the IGBT and associated data of standard modules for this application. Second, the hybrid power flow approach is described using a parallel solution of the AC and the DC system with a combined Jacobian. Third, synthetic SiC-JFET characteristics are used in order to compare the performance in terms of efficiency at different loadings of the converter stations. It is shown that SiC-JFETs can significantly reduce losses of the system and almost eliminate switching losses (no-load losses) of converters, which is especially relevant at low utilizations with high occurrence considering the fluctuating nature of offshore wind power.
AB - This contribution investigates the influence of SiC semiconductor devices for HVDC transmission technology on system level. Different SiC devices are recently in the focus of many scientific publications. However, for extra high power applications, the SiC-JFET exhibits promising properties. In order to assess the impact on system losses of such a new technology, a scenario of a large-scale meshed HVDC offshore power system using the CIGRE B4 DC Grid Test System is investigated. In contrast to classical approaches for power flow calculations, detailed representation of semi-conductor based power electronic converters is necessary if the impact of evolving module technologies is to be analyzed. Therefore, this contribution will introduce an efficient way to solve the load flow problem for hybrid AC/DC systems with a detailed and accurate loss representation for converter stations. First, the converter station loss model is derived based on power electronic device characteristics of the IGBT and associated data of standard modules for this application. Second, the hybrid power flow approach is described using a parallel solution of the AC and the DC system with a combined Jacobian. Third, synthetic SiC-JFET characteristics are used in order to compare the performance in terms of efficiency at different loadings of the converter stations. It is shown that SiC-JFETs can significantly reduce losses of the system and almost eliminate switching losses (no-load losses) of converters, which is especially relevant at low utilizations with high occurrence considering the fluctuating nature of offshore wind power.
KW - IGBT losses
KW - SiC
KW - hvdc
KW - load flow
KW - multi-terminal
UR - http://www.scopus.com/inward/record.url?scp=85010006370&partnerID=8YFLogxK
U2 - 10.1109/appeec.2016.7779581
DO - 10.1109/appeec.2016.7779581
M3 - Conference contribution
T3 - Asia-Pacific Power and Energy Engineering Conference, APPEEC
SP - 634
EP - 639
BT - IEEE PES APPEEC 2016 - 2016 IEEE PES Asia Pacific Power and Energy Engineering Conference
ER -