Details
| Original language | English |
|---|---|
| Title of host publication | German Microwave Conference Digest of Papers, GeMIC 2010 |
| Pages | 114-117 |
| Number of pages | 4 |
| Publication status | Published - 2010 |
| Event | German Microwave Conference, GeMIC 2010 - Berlin, Germany Duration: 15 Mar 2010 → 17 Mar 2010 |
Publication series
| Name | German Microwave Conference Digest of Papers, GeMIC 2010 |
|---|
Abstract
In this work a 10W GaN based class-F amplifier at 1GHz is presented. The presented amplifier uses load modulation principle to achieve high efficiency over 11dB output dynamic range. The output matching network is an L matching network with a tunable inductor and a tunable capacitor. The tunable inductor is based on a λ/4 impedance inverter and a switchable capacitor bank. The tunable inductor presents a short circuit for the second harmonic and an open circuit to the third harmonic; additionally together with the tunable capacitor they present the optimum working impedance for the transistor. The designed amplifier has a power added efficiency of 82% at an output power of 40 dBm and through using adaptive matching it can achieve a PAE of 60% at an output power of 29dBm, in contrast to a PAE of only 22% in the case of using a fixed matching network.
Keywords
- Adaptive matching, Class-F, Impedance inverter, Power amplifiers
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
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German Microwave Conference Digest of Papers, GeMIC 2010. 2010. p. 114-117 5498213 (German Microwave Conference Digest of Papers, GeMIC 2010).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Efficiency enhancement of class-F GaN power amplifiers using load modulation
AU - El Din, Mohamed Gamal
AU - Mohammadifard, Somayeh
AU - Geck, Bernd
AU - Rolfes, Ilona
PY - 2010
Y1 - 2010
N2 - In this work a 10W GaN based class-F amplifier at 1GHz is presented. The presented amplifier uses load modulation principle to achieve high efficiency over 11dB output dynamic range. The output matching network is an L matching network with a tunable inductor and a tunable capacitor. The tunable inductor is based on a λ/4 impedance inverter and a switchable capacitor bank. The tunable inductor presents a short circuit for the second harmonic and an open circuit to the third harmonic; additionally together with the tunable capacitor they present the optimum working impedance for the transistor. The designed amplifier has a power added efficiency of 82% at an output power of 40 dBm and through using adaptive matching it can achieve a PAE of 60% at an output power of 29dBm, in contrast to a PAE of only 22% in the case of using a fixed matching network.
AB - In this work a 10W GaN based class-F amplifier at 1GHz is presented. The presented amplifier uses load modulation principle to achieve high efficiency over 11dB output dynamic range. The output matching network is an L matching network with a tunable inductor and a tunable capacitor. The tunable inductor is based on a λ/4 impedance inverter and a switchable capacitor bank. The tunable inductor presents a short circuit for the second harmonic and an open circuit to the third harmonic; additionally together with the tunable capacitor they present the optimum working impedance for the transistor. The designed amplifier has a power added efficiency of 82% at an output power of 40 dBm and through using adaptive matching it can achieve a PAE of 60% at an output power of 29dBm, in contrast to a PAE of only 22% in the case of using a fixed matching network.
KW - Adaptive matching
KW - Class-F
KW - Impedance inverter
KW - Power amplifiers
UR - http://www.scopus.com/inward/record.url?scp=77955117383&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77955117383
SN - 9781424449330
T3 - German Microwave Conference Digest of Papers, GeMIC 2010
SP - 114
EP - 117
BT - German Microwave Conference Digest of Papers, GeMIC 2010
T2 - German Microwave Conference, GeMIC 2010
Y2 - 15 March 2010 through 17 March 2010
ER -