Details
| Original language | English |
|---|---|
| Pages (from-to) | 287-289 |
| Number of pages | 3 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 3 |
| Issue number | 9 |
| Early online date | 17 Sept 2009 |
| Publication status | Published - 2009 |
| Externally published | Yes |
Abstract
We measure surface recombination velocities (SRVs) below 10 cm/s on p-type crystalline silicon wafers passivated by atomic-layer-deposited (ALD) aluminium oxide (Al2O3) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al2O3 thickness. For ultrathin Al2O3 layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p-Si and an exceptionally low SRV of 1.8 cm/s on high-resistivity (200 Ω cm) p-Si. Ultrathin Al 2O3 films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma-enhanced chemical vapour deposition of silicon nitride (SiNx). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al2O3 and SiN x show that a substantially improved thermal stability during high-temperature firing at 830 °C is obtained for the Al2O 3/SiNx stacks compared to the single-layer Al 2O3 passivation. Al2O3/SiN x stacks are hence ideally suited for the implementation into industrial-type silicon solar cells where the metal contacts are made by screen-printing and high-temperature firing of metal pastes.
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physica Status Solidi - Rapid Research Letters, Vol. 3, No. 9, 2009, p. 287-289.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiN x stacks
AU - Schmidt, Jan
AU - Veith, Boris
AU - Brendel, Rolf
N1 - Funding Information: Funding was provided by the State of Lower Saxony and the German Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) under contract number 0325050 (“ALD”).
PY - 2009
Y1 - 2009
N2 - We measure surface recombination velocities (SRVs) below 10 cm/s on p-type crystalline silicon wafers passivated by atomic-layer-deposited (ALD) aluminium oxide (Al2O3) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al2O3 thickness. For ultrathin Al2O3 layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p-Si and an exceptionally low SRV of 1.8 cm/s on high-resistivity (200 Ω cm) p-Si. Ultrathin Al 2O3 films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma-enhanced chemical vapour deposition of silicon nitride (SiNx). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al2O3 and SiN x show that a substantially improved thermal stability during high-temperature firing at 830 °C is obtained for the Al2O 3/SiNx stacks compared to the single-layer Al 2O3 passivation. Al2O3/SiN x stacks are hence ideally suited for the implementation into industrial-type silicon solar cells where the metal contacts are made by screen-printing and high-temperature firing of metal pastes.
AB - We measure surface recombination velocities (SRVs) below 10 cm/s on p-type crystalline silicon wafers passivated by atomic-layer-deposited (ALD) aluminium oxide (Al2O3) films of thickness ≥10 nm. For films thinner than 10 nm the SRV increases with decreasing Al2O3 thickness. For ultrathin Al2O3 layers of 3.6 nm we still attain a SRV < 22 cm/s on 1.5 Ω cm p-Si and an exceptionally low SRV of 1.8 cm/s on high-resistivity (200 Ω cm) p-Si. Ultrathin Al 2O3 films are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is extremely low compared to the frequently used plasma-enhanced chemical vapour deposition of silicon nitride (SiNx). Our experiments on silicon wafers passivated with stacks composed of ultrathin Al2O3 and SiN x show that a substantially improved thermal stability during high-temperature firing at 830 °C is obtained for the Al2O 3/SiNx stacks compared to the single-layer Al 2O3 passivation. Al2O3/SiN x stacks are hence ideally suited for the implementation into industrial-type silicon solar cells where the metal contacts are made by screen-printing and high-temperature firing of metal pastes.
UR - http://www.scopus.com/inward/record.url?scp=73949100676&partnerID=8YFLogxK
U2 - 10.1002/pssr.200903272
DO - 10.1002/pssr.200903272
M3 - Article
AN - SCOPUS:73949100676
VL - 3
SP - 287
EP - 289
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 9
ER -