Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100)

Research output: Contribution to journal › Article › Research › peer review

Authors

  • Qing Qing Sun
  • Apurba Laha
  • Shi Jin Ding
  • David Wei Zhang
  • H. Jörg Osten
  • A. Fissel

Research Organisations

External Research Organisations

  • Fudan University
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Details

Original languageEnglish
Article number152908
JournalApplied physics letters
Volume92
Issue number15
Publication statusPublished - 18 Apr 2008

Abstract

The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

ASJC Scopus subject areas

Cite this

Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). / Sun, Qing Qing; Laha, Apurba; Ding, Shi Jin et al.
In: Applied physics letters, Vol. 92, No. 15, 152908, 18.04.2008.

Research output: Contribution to journal › Article › Research › peer review

Sun, Q. Q., Laha, A., Ding, S. J., Zhang, D. W., Osten, H. J., & Fissel, A. (2008). Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). Applied physics letters, 92(15), Article 152908. https://doi.org/10.1063/1.2912523
Sun QQ, Laha A, Ding SJ, Zhang DW, Osten HJ, Fissel A. Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). Applied physics letters. 2008 Apr 18;92(15):152908. doi: 10.1063/1.2912523
Sun, Qing Qing ; Laha, Apurba ; Ding, Shi Jin et al. / Effective passivation of slow interface states at the interface of single crystalline Gd2 O3 and Si(100). In: Applied physics letters. 2008 ; Vol. 92, No. 15.
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AU - Sun, Qing Qing

AU - Laha, Apurba

AU - Ding, Shi Jin

AU - Zhang, David Wei

AU - Osten, H. Jörg

AU - Fissel, A.

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AB - The as-grown single crystalline Gd2 O3 thin film on Si(100) substrate suffers from flatband voltage instability and large hysteresis which are possibly due to the intrinsic dangling bonds induced by the existing binding mismatch at the Gd2 O3 Si (100) interface. The instability of flatband voltage and hysteresis of Pt Gd2 O3 Si and W Gd2 O3 Si structures can be fully eliminated by the introduction of traditional forming gas annealing with proper process optimization. Both optimized metal-oxide-semiconductor structures show negligible hysteresis with the interface state at the magnitude order of 1011 cm2 eV at the midgap of silicon and can be considered for the future of complementary metal oxide semiconductor devices.

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