Details
| Original language | English |
|---|---|
| Pages (from-to) | 441-447 |
| Number of pages | 7 |
| Journal | Energy Procedia |
| Volume | 124 |
| Publication status | Published - Oct 2017 |
Abstract
We characterize the surface passivation properties of ultrathin titanium oxide (TiO x) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments prior to TiO x deposition, such as native silicon oxide (SiO y), chemically grown SiO y and thermally grown SiO y. The best passivation quality is achieved with a native SiO y grown over 4 months and a TiO x layer thickness of 5 nm, resulting in an effective lifetime of 1.2 ms on 1.3 Ωcm p-type float-zone silicon. The measured maximum lifetime corresponds to an implied open-circuit voltage (iV oc) of 710 mV. For thinner TiO x layers the passivation quality is reduced, however, samples passivated with only 2 nm of TiO x still show a lifetime of 612 μs and an iV oc of 694 mV. The contact resistivity of the TiO x including the SiO y interlayer between the silicon wafer and the TiO x is below 0.8 Ωcm 2. The combination of excellent surface passivation and low contact resistivity has the potential for silicon solar cells with efficiencies exceeding 26%.
Keywords
- atomic layer deposition, electron-selective contact, silicon solar cell, surface passivation, titanium oxide
ASJC Scopus subject areas
- Energy(all)
- General Energy
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In: Energy Procedia, Vol. 124, 10.2017, p. 441-447.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
AU - Titova, Valeriya
AU - Veith-Wolf, Boris A.
AU - Startsev, Dimitri
AU - Schmidt, Jan
N1 - Funding Information: This work was supported by the German Federal Environmental Foundation (DBU) and the German State of Lower Saxony. We acknowledge the funding of this project within the PhD Scholarship Programme of the DBU.
PY - 2017/10
Y1 - 2017/10
N2 - We characterize the surface passivation properties of ultrathin titanium oxide (TiO x) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments prior to TiO x deposition, such as native silicon oxide (SiO y), chemically grown SiO y and thermally grown SiO y. The best passivation quality is achieved with a native SiO y grown over 4 months and a TiO x layer thickness of 5 nm, resulting in an effective lifetime of 1.2 ms on 1.3 Ωcm p-type float-zone silicon. The measured maximum lifetime corresponds to an implied open-circuit voltage (iV oc) of 710 mV. For thinner TiO x layers the passivation quality is reduced, however, samples passivated with only 2 nm of TiO x still show a lifetime of 612 μs and an iV oc of 694 mV. The contact resistivity of the TiO x including the SiO y interlayer between the silicon wafer and the TiO x is below 0.8 Ωcm 2. The combination of excellent surface passivation and low contact resistivity has the potential for silicon solar cells with efficiencies exceeding 26%.
AB - We characterize the surface passivation properties of ultrathin titanium oxide (TiO x) films deposited by atomic layer deposition (ALD) on crystalline silicon by means of carrier lifetime measurements. We compare different silicon surface treatments prior to TiO x deposition, such as native silicon oxide (SiO y), chemically grown SiO y and thermally grown SiO y. The best passivation quality is achieved with a native SiO y grown over 4 months and a TiO x layer thickness of 5 nm, resulting in an effective lifetime of 1.2 ms on 1.3 Ωcm p-type float-zone silicon. The measured maximum lifetime corresponds to an implied open-circuit voltage (iV oc) of 710 mV. For thinner TiO x layers the passivation quality is reduced, however, samples passivated with only 2 nm of TiO x still show a lifetime of 612 μs and an iV oc of 694 mV. The contact resistivity of the TiO x including the SiO y interlayer between the silicon wafer and the TiO x is below 0.8 Ωcm 2. The combination of excellent surface passivation and low contact resistivity has the potential for silicon solar cells with efficiencies exceeding 26%.
KW - atomic layer deposition
KW - electron-selective contact
KW - silicon solar cell
KW - surface passivation
KW - titanium oxide
UR - http://www.scopus.com/inward/record.url?scp=85031901317&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2017.09.272
DO - 10.1016/j.egypro.2017.09.272
M3 - Article
VL - 124
SP - 441
EP - 447
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
ER -