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Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Authors

  • Boris Veith-Wolf
  • Robert Witteck
  • Arnaud Morlier
  • Henning Schulte-Huxel
  • Jan Schmidt

Research Organisations

External Research Organisations

  • Institute for Solar Energy Research (ISFH)

Details

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1173-1178
Number of pages6
ISBN (electronic)9781509027248
Publication statusPublished - 18 Nov 2016
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Abstract

We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

Keywords

    Aluminum oxide, carrier lifetime, crystalline silicon, degradation, silicon nitride, surface passivation, UV stability

ASJC Scopus subject areas

Cite this

Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces. / Veith-Wolf, Boris; Witteck, Robert; Morlier, Arnaud et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1173-1178 7749799 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review

Veith-Wolf, B, Witteck, R, Morlier, A, Schulte-Huxel, H & Schmidt, J 2016, Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749799, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1173-1178, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5 Jun 2016. https://doi.org/10.1109/pvsc.2016.7749799
Veith-Wolf, B., Witteck, R., Morlier, A., Schulte-Huxel, H., & Schmidt, J. (2016). Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1173-1178). Article 7749799 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/pvsc.2016.7749799
Veith-Wolf B, Witteck R, Morlier A, Schulte-Huxel H, Schmidt J. Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1173-1178. 7749799. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/pvsc.2016.7749799
Veith-Wolf, Boris ; Witteck, Robert ; Morlier, Arnaud et al. / Effect of UV illumination on the passivation quality of AlOx/c-Si interfaces. 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 1173-1178 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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abstract = "We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.",
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AU - Veith-Wolf, Boris

AU - Witteck, Robert

AU - Morlier, Arnaud

AU - Schulte-Huxel, Henning

AU - Schmidt, Jan

N1 - Publisher Copyright: © 2016 IEEE.

PY - 2016/11/18

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N2 - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

AB - We report on the stability of the c-Si surface passivation quality by aluminum oxide (AlOx), silicon nitride (SiNp), and AlOx/SiNy stacks under UV illumination. Low-temperature annealed AlOx shows a weak degradation during UV illumination, with surface recombination velocities (SRVs) of 25 cm/s after a UV dose of 275 kWh/m2. This degradation is less pronounced compared to that of fired SiNy layers with an SRV of 117 cm/s. After a firing step, the AlOx layer show even an improvement during UV illumination, resulting in stabilized SRVs of down to 1 cm/s. The improvement is mainly due to an increase of the negative fixed charge density in the AlOx layer up to a large value of -1.2×1013 cm-2.

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