Details
| Original language | English |
|---|---|
| Title of host publication | ESSDERC 1998 |
| Subtitle of host publication | Proceedings of the 28th European Solid-State Device Research Conference |
| Editors | A. Touboul, Y. Danto, H. Grunbacher |
| Publisher | IEEE Computer Society |
| Pages | 132-135 |
| Number of pages | 4 |
| ISBN (electronic) | 2863322346 |
| Publication status | Published - 1998 |
| Externally published | Yes |
| Event | 28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France Duration: 8 Sept 1998 → 10 Sept 1998 |
Publication series
| Name | European Solid-State Device Research Conference |
|---|---|
| ISSN (Print) | 1930-8876 |
Abstract
The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.
ASJC Scopus subject areas
- Engineering(all)
- Electrical and Electronic Engineering
- Engineering(all)
- Safety, Risk, Reliability and Quality
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
ESSDERC 1998 : Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. p. 132-135 1503506 (European Solid-State Device Research Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe
T2 - 28th European Solid-State Device Research Conference, ESSDERC 1998
AU - Anteney, I. M.
AU - Ashburn, P.
AU - Parker, G. J.
AU - Lippert, G.
AU - Osten, H. J.
PY - 1998
Y1 - 1998
N2 - The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.
AB - The effect of a background (1020cm-3) C concentration in SiGe HBTs is studied with a view to suppressing parasitic energy barriers resulting from transient enhanced diffusion of boron. The carbon is introduced into different locations in the base layer and its effect on parasitic energy barriers is determined by analysis of the temperature dependence of the collector current. It is shown that carbon is only effective in suppressing TED when 'it is located throughout the whole SiGe base layer, including the undoped spacer layers, indicating that the supression capability is a localised phenomenon.
UR - http://www.scopus.com/inward/record.url?scp=84908158074&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84908158074
T3 - European Solid-State Device Research Conference
SP - 132
EP - 135
BT - ESSDERC 1998
A2 - Touboul, A.
A2 - Danto, Y.
A2 - Grunbacher, H.
PB - IEEE Computer Society
Y2 - 8 September 1998 through 10 September 1998
ER -