Details
| Original language | English |
|---|---|
| Article number | 075304 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 87 |
| Issue number | 7 |
| Publication status | Published - 6 Feb 2013 |
Abstract
Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Γs and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D2d → C2v). However, by looking at the anisotropy of both Γs and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
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In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 7, 075304, 06.02.2013.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells
AU - English, D. J.
AU - Hübner, Jens
AU - Eldridge, P. S.
AU - Taylor, D.
AU - Henini, M.
AU - Harley, R. T.
AU - Oestreich, Michael
PY - 2013/2/6
Y1 - 2013/2/6
N2 - Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Γs and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D2d → C2v). However, by looking at the anisotropy of both Γs and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.
AB - Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate Γs and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D2d → C2v). However, by looking at the anisotropy of both Γs and g* simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.
UR - http://www.scopus.com/inward/record.url?scp=84874551734&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.87.075304
DO - 10.1103/PhysRevB.87.075304
M3 - Article
AN - SCOPUS:84874551734
VL - 87
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 7
M1 - 075304
ER -