Details
| Original language | English |
|---|---|
| Pages (from-to) | 654-663 |
| Number of pages | 10 |
| Journal | Science and Technology of Advanced Materials |
| Volume | 18 |
| Issue number | 1 |
| Publication status | Published - 31 Dec 2017 |
| Externally published | Yes |
Abstract
Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.
Keywords
- Chemical mechanical polishing, chemical vapour deposition, nanocrystalline diamond, surface roughness
ASJC Scopus subject areas
- Materials Science(all)
- General Materials Science
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In: Science and Technology of Advanced Materials, Vol. 18, No. 1, 31.12.2017, p. 654-663.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effect of slurry composition on the chemical mechanical polishing of thin diamond films
AU - Werrell, Jessica M.
AU - Mandal, Soumen
AU - Thomas, Evan L. H.
AU - Brousseau, Emmanuel B.
AU - Lewis, Ryan
AU - Borri, Paola
AU - Davies, Philip R.
AU - Williams, Oliver A.
N1 - Publisher Copyright: © 2017 Informa UK Limited, trading as Taylor & Francis Group.
PY - 2017/12/31
Y1 - 2017/12/31
N2 - Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.
AB - Nanocrystalline diamond (NCD) thin films grown by chemical vapour deposition have an intrinsic surface roughness, which hinders the development and performance of the films’ various applications. Traditional methods of diamond polishing are not effective on NCD thin films. Films either shatter due to the combination of wafer bow and high mechanical pressures or produce uneven surfaces, which has led to the adaptation of the chemical mechanical polishing (CMP) technique for NCD films. This process is poorly understood and in need of optimisation. To compare the effect of slurry composition and pH upon polishing rates, a series of NCD thin films have been polished for three hours using a Logitech Ltd. Tribo CMP System in conjunction with a polyester/polyurethane polishing cloth and six different slurries. The reduction in surface roughness was measured hourly using an atomic force microscope. The final surface chemistry was examined using X-ray photoelectron spectroscopy and a scanning electron microscope. It was found that of all the various properties of the slurries, including pH and composition, the particle size was the determining factor for the polishing rate. The smaller particles polishing at a greater rate than the larger ones.
KW - Chemical mechanical polishing
KW - chemical vapour deposition
KW - nanocrystalline diamond
KW - surface roughness
UR - http://www.scopus.com/inward/record.url?scp=85029477719&partnerID=8YFLogxK
U2 - 10.1080/14686996.2017.1366815
DO - 10.1080/14686996.2017.1366815
M3 - Article
VL - 18
SP - 654
EP - 663
JO - Science and Technology of Advanced Materials
JF - Science and Technology of Advanced Materials
SN - 1468-6996
IS - 1
ER -