Details
| Original language | English |
|---|---|
| Title of host publication | 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010 |
| Subtitle of host publication | Conference Proceedings |
| Pages | 1207-1209 |
| Number of pages | 3 |
| Publication status | Published - 2010 |
| Event | 35th IEEE Photovoltaic Specialists Conference, PVSC 2010: PVSC 2010 - Honolulu, HI, United States Duration: 20 Jun 2010 → 25 Jun 2010 Conference number: 35 |
Publication series
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
The influence of SiO2 thicknesses in thermal- SiO 2/PECVD-SiN stacks on surface passivation of 2.5 Ωcm n-type Czochralski silicon substrates has been investigated. By annealing theses stacks in air we achieve surface recombination velocities (SRV) better (i.e. lower) than 2.6 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration for obtaining optimum surface passivation. Furthermore, we also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO 2/SiN stacks after storage in the dark for several months. We find a slight degradation of the surface passivation for thicker oxides and no observable degradation for the 10 nm thick SiO2 layer in our SiO 2/SiN stacks after 6 weeks of storage. Short annealing at 400°C in air restores the passivation quality and from then on remains unchanged for the measured storage time of 35 weeks.
ASJC Scopus subject areas
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Industrial and Manufacturing Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010: Conference Proceedings. 2010. p. 1207-1209 5614072 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Effect of SiO2 ticknesses in thermal-SiO2/PECVD-SiN stacks on surface passivation of n-Type Cz silicon substrates
AU - Larionova, Ye
AU - Harder, N. P.
AU - Brendel, R.
N1 - Conference code: 35
PY - 2010
Y1 - 2010
N2 - The influence of SiO2 thicknesses in thermal- SiO 2/PECVD-SiN stacks on surface passivation of 2.5 Ωcm n-type Czochralski silicon substrates has been investigated. By annealing theses stacks in air we achieve surface recombination velocities (SRV) better (i.e. lower) than 2.6 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration for obtaining optimum surface passivation. Furthermore, we also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO 2/SiN stacks after storage in the dark for several months. We find a slight degradation of the surface passivation for thicker oxides and no observable degradation for the 10 nm thick SiO2 layer in our SiO 2/SiN stacks after 6 weeks of storage. Short annealing at 400°C in air restores the passivation quality and from then on remains unchanged for the measured storage time of 35 weeks.
AB - The influence of SiO2 thicknesses in thermal- SiO 2/PECVD-SiN stacks on surface passivation of 2.5 Ωcm n-type Czochralski silicon substrates has been investigated. By annealing theses stacks in air we achieve surface recombination velocities (SRV) better (i.e. lower) than 2.6 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration for obtaining optimum surface passivation. Furthermore, we also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO 2/SiN stacks after storage in the dark for several months. We find a slight degradation of the surface passivation for thicker oxides and no observable degradation for the 10 nm thick SiO2 layer in our SiO 2/SiN stacks after 6 weeks of storage. Short annealing at 400°C in air restores the passivation quality and from then on remains unchanged for the measured storage time of 35 weeks.
UR - http://www.scopus.com/inward/record.url?scp=78650139171&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2010.5614072
DO - 10.1109/PVSC.2010.5614072
M3 - Conference contribution
AN - SCOPUS:78650139171
SN - 9781424458912
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 1207
EP - 1209
BT - 35th IEEE Photovoltaic Specialists Conference Honolulu, HI, June 20-25, 2010
T2 - 35th IEEE Photovoltaic Specialists Conference, PVSC 2010
Y2 - 20 June 2010 through 25 June 2010
ER -