Details
| Original language | English |
|---|---|
| Article number | 042111 |
| Journal | Applied physics letters |
| Volume | 104 |
| Issue number | 4 |
| Publication status | Published - 31 Jan 2014 |
| Externally published | Yes |
Abstract
Rapid thermal annealing in a belt furnace results in a dramatic change of the recombination properties of boron-doped Czochralski silicon: (1) the lifetime degraded by applying a prolonged illumination at room temperature was significantly improved, (2) after subsequent dark recovery, the lifetime has a remarkably high value, and (3) the permanent recovery, by annealing at 185 °C under illumination, is enormously accelerated, and the finally achieved stable lifetime acquires a record value of 1.5 ms, as compared to 110 μs after permanent recovery of not-annealed reference samples.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 104, No. 4, 042111, 31.01.2014.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effect of rapid thermal annealing on recombination centres in boron-doped Czochralski-grown silicon
AU - Walter, D. C.
AU - Lim, B.
AU - Bothe, K.
AU - Voronkov, V. V.
AU - Falster, R.
AU - Schmidt, J.
N1 - Publisher Copyright: © 2014 AIP Publishing LLC.
PY - 2014/1/31
Y1 - 2014/1/31
N2 - Rapid thermal annealing in a belt furnace results in a dramatic change of the recombination properties of boron-doped Czochralski silicon: (1) the lifetime degraded by applying a prolonged illumination at room temperature was significantly improved, (2) after subsequent dark recovery, the lifetime has a remarkably high value, and (3) the permanent recovery, by annealing at 185 °C under illumination, is enormously accelerated, and the finally achieved stable lifetime acquires a record value of 1.5 ms, as compared to 110 μs after permanent recovery of not-annealed reference samples.
AB - Rapid thermal annealing in a belt furnace results in a dramatic change of the recombination properties of boron-doped Czochralski silicon: (1) the lifetime degraded by applying a prolonged illumination at room temperature was significantly improved, (2) after subsequent dark recovery, the lifetime has a remarkably high value, and (3) the permanent recovery, by annealing at 185 °C under illumination, is enormously accelerated, and the finally achieved stable lifetime acquires a record value of 1.5 ms, as compared to 110 μs after permanent recovery of not-annealed reference samples.
UR - http://www.scopus.com/inward/record.url?scp=84908452965&partnerID=8YFLogxK
U2 - 10.1063/1.4863674
DO - 10.1063/1.4863674
M3 - Article
AN - SCOPUS:84908452965
VL - 104
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 4
M1 - 042111
ER -