Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces

Research output: Contribution to journal › Article › Research › peer review

Authors

  • E. Lipp
  • M. Eizenberg
  • M. Czernohorsky
  • H. J. Osten

Research Organisations

External Research Organisations

  • Technion-Israel Institute of Technology
  • Fraunhofer Institute for Electronic Nano Systems (ENAS)
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Details

Original languageEnglish
Article number193513
JournalApplied physics letters
Volume93
Issue number19
Publication statusPublished - 14 Nov 2008

Abstract

The extent of Fermi-level pinning at metal/ Gd2 O3 interfaces is studied as a function of oxide structure by comparing the flatband voltage of Ta- and Pt-gated capacitors. The flatband voltage shift between the two metals, which equals the difference in effective work functions, was found to be largest when the oxide is single crystalline (1.30±0.05 V), while lower values are measured when the oxide is domain structured (1.05±0.05 V) or amorphous (0.80±0.05 V). These results indicate that long-range ordering has a dominant effect on Fermi-level pinning at metal/high- k interfaces.

ASJC Scopus subject areas

Cite this

Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. / Lipp, E.; Eizenberg, M.; Czernohorsky, M. et al.
In: Applied physics letters, Vol. 93, No. 19, 193513, 14.11.2008.

Research output: Contribution to journal › Article › Research › peer review

Lipp, E., Eizenberg, M., Czernohorsky, M., & Osten, H. J. (2008). Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. Applied physics letters, 93(19), Article 193513. https://doi.org/10.1063/1.3028071
Lipp E, Eizenberg M, Czernohorsky M, Osten HJ. Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. Applied physics letters. 2008 Nov 14;93(19):193513. doi: 10.1063/1.3028071
Lipp, E. ; Eizenberg, M. ; Czernohorsky, M. et al. / Effect of oxide structure on the Fermi-level pinning at metal/ Gd 2 O3 interfaces. In: Applied physics letters. 2008 ; Vol. 93, No. 19.
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