Details
| Original language | English |
|---|---|
| Article number | 072903 |
| Journal | Applied physics letters |
| Volume | 96 |
| Issue number | 7 |
| Publication status | Published - 2010 |
Abstract
The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2 O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2 O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2 O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/ Gd2 O3 /Si capacitor are much superior to those layers grown on clean Si surfaces.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
- Standard
- Harvard
- Apa
- Vancouver
- BibTeX
- RIS
In: Applied physics letters, Vol. 96, No. 7, 072903, 2010.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effect of Ge passivation on interfacial properties of crystalline Gd2 O3 thin films grown on Si substrates
AU - Laha, Apurba
AU - Fissel, A.
AU - Osten, H. J.
PY - 2010
Y1 - 2010
N2 - The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2 O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2 O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2 O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/ Gd2 O3 /Si capacitor are much superior to those layers grown on clean Si surfaces.
AB - The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2 O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2 O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2 O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/ Gd2 O3 /Si capacitor are much superior to those layers grown on clean Si surfaces.
UR - http://www.scopus.com/inward/record.url?scp=77249101651&partnerID=8YFLogxK
U2 - 10.1063/1.3318260
DO - 10.1063/1.3318260
M3 - Article
AN - SCOPUS:77249101651
VL - 96
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 7
M1 - 072903
ER -