Details
| Original language | English |
|---|---|
| Article number | 182907 |
| Journal | Applied physics letters |
| Volume | 93 |
| Issue number | 18 |
| Publication status | Published - 6 Nov 2008 |
Abstract
We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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In: Applied physics letters, Vol. 93, No. 18, 182907, 06.11.2008.
Research output: Contribution to journal › Article › Research › peer review
}
TY - JOUR
T1 - Effect of domain boundaries on the electrical properties of crystalline Gd2 O3 thin films
AU - Laha, Apurba
AU - Bugiel, E.
AU - Wang, J. X.
AU - Sun, Q. Q.
AU - Fissel, A.
AU - Osten, H. J.
N1 - Funding Information: This work was supported by the German Federal Ministry of Education and Research (BMBF) under the MEGAEPOS project.
PY - 2008/11/6
Y1 - 2008/11/6
N2 - We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
AB - We report on the effect of domain boundaries on the electrical properties of epitaxial Gd2 O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth. Dedicated preparation of the substrate surfaces can lead to two different microstructures of epitaxial Gd2 O 3 layers when grown at identical growth conditions. A substrate surface with terraces of biatomic steps height is the key point to achieve single crystalline epitaxial Gd2 O3 layer. Such epi- Gd2 O 3 layers exhibited significantly lower leakage currents compared with the commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, this difference disappears, indicating that for ultrathin layers direct tunneling becomes dominating. Additionally, forming gas annealing can reduce the leakage current by a few orders of magnitude. Here, thinner layers of both structural types exhibited similar electrical properties.
UR - http://www.scopus.com/inward/record.url?scp=55849121951&partnerID=8YFLogxK
U2 - 10.1063/1.3009206
DO - 10.1063/1.3009206
M3 - Article
AN - SCOPUS:55849121951
VL - 93
JO - Applied physics letters
JF - Applied physics letters
SN - 0003-6951
IS - 18
M1 - 182907
ER -