Details
| Original language | English |
|---|---|
| Title of host publication | 3rd International Conference on Signals, Circuits and Systems, SCS 2009 |
| Publication status | Published - 2009 |
| Event | 3rd International Conference on Signals, Circuits and Systems, SCS 2009 - Medenine, Tunisia Duration: 6 Nov 2009 → 8 Nov 2009 |
Publication series
| Name | 3rd International Conference on Signals, Circuits and Systems, SCS 2009 |
|---|
Abstract
In this work, impact of domain boundaries on dielectric properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth were studied. Epitaxial Gd 2O3 layers with and without domain boundaries could be prepared on same Si(001) substrates with 4° miscut when the surface is prepared under special condition prior to the layer growth. A miscut substrate surface with terraces of biatomic steps height could be the crucial point to be succeeded to grow single domain epitaxial Gd2O3 layer. EpiGd2O3 layers without any domain boundaries exhibited significantly lower leakage currents compare to that commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, the differences disappear, indicating that for ultra thin layers direct tunneling becomes dominant conduction mechanism. Additionally, a forming gas annealing treatment on these samples could further reduce the leakage current by few orders of magnitudes irrespective of their structure. Here, thinner layers of both structural types exhibited similar electrical properties.
Keywords
- Epitaxial lanthanide oxide
ASJC Scopus subject areas
- Computer Science(all)
- Computer Networks and Communications
- Engineering(all)
- Control and Systems Engineering
- Engineering(all)
- Electrical and Electronic Engineering
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3rd International Conference on Signals, Circuits and Systems, SCS 2009. 2009. 5414203 (3rd International Conference on Signals, Circuits and Systems, SCS 2009).
Research output: Chapter in book/report/conference proceeding › Conference contribution › Research › peer review
}
TY - GEN
T1 - Effect of Domain Boundaries on Dielectric Properties of Lanthanide Oxide based Gate Dielectrics
AU - Laha, Apurba
AU - Bugiel, Eberhard
AU - Wang, J. X.
AU - Osten, H. J.
AU - Fissel, A.
PY - 2009
Y1 - 2009
N2 - In this work, impact of domain boundaries on dielectric properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth were studied. Epitaxial Gd 2O3 layers with and without domain boundaries could be prepared on same Si(001) substrates with 4° miscut when the surface is prepared under special condition prior to the layer growth. A miscut substrate surface with terraces of biatomic steps height could be the crucial point to be succeeded to grow single domain epitaxial Gd2O3 layer. EpiGd2O3 layers without any domain boundaries exhibited significantly lower leakage currents compare to that commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, the differences disappear, indicating that for ultra thin layers direct tunneling becomes dominant conduction mechanism. Additionally, a forming gas annealing treatment on these samples could further reduce the leakage current by few orders of magnitudes irrespective of their structure. Here, thinner layers of both structural types exhibited similar electrical properties.
AB - In this work, impact of domain boundaries on dielectric properties of epitaxial Gd2O3 thin films grown on Si(001) substrates with 4° miscut along [110] azimuth were studied. Epitaxial Gd 2O3 layers with and without domain boundaries could be prepared on same Si(001) substrates with 4° miscut when the surface is prepared under special condition prior to the layer growth. A miscut substrate surface with terraces of biatomic steps height could be the crucial point to be succeeded to grow single domain epitaxial Gd2O3 layer. EpiGd2O3 layers without any domain boundaries exhibited significantly lower leakage currents compare to that commonly obtained epitaxial layers with two orthogonal domains. However, for capacitance equivalent thickness below 1 nm, the differences disappear, indicating that for ultra thin layers direct tunneling becomes dominant conduction mechanism. Additionally, a forming gas annealing treatment on these samples could further reduce the leakage current by few orders of magnitudes irrespective of their structure. Here, thinner layers of both structural types exhibited similar electrical properties.
KW - Epitaxial lanthanide oxide
UR - http://www.scopus.com/inward/record.url?scp=77951476606&partnerID=8YFLogxK
U2 - 10.1109/ICSCS.2009.5414203
DO - 10.1109/ICSCS.2009.5414203
M3 - Conference contribution
AN - SCOPUS:77951476606
SN - 9781424443987
T3 - 3rd International Conference on Signals, Circuits and Systems, SCS 2009
BT - 3rd International Conference on Signals, Circuits and Systems, SCS 2009
T2 - 3rd International Conference on Signals, Circuits and Systems, SCS 2009
Y2 - 6 November 2009 through 8 November 2009
ER -