Details
| Original language | English |
|---|---|
| Pages (from-to) | 803-806 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting, IEDM |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | 1997 International Electron Devices Meeting - Washington, United States Duration: 7 Dec 1997 → 10 Dec 1997 |
Abstract
We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.
ASJC Scopus subject areas
- Materials Science(all)
- Electronic, Optical and Magnetic Materials
- Physics and Astronomy(all)
- Condensed Matter Physics
- Engineering(all)
- Electrical and Electronic Engineering
- Materials Science(all)
- Materials Chemistry
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In: Technical Digest - International Electron Devices Meeting, IEDM, 1997, p. 803-806.
Research output: Contribution to journal › Conference article › Research › peer review
}
TY - JOUR
T1 - Effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin
AU - Osten, H. J.
AU - Lippert, G.
AU - Knoll, D.
AU - Barth, R.
AU - Heinemann, B.
AU - Ruecker, H.
AU - Schley, P.
PY - 1997
Y1 - 1997
N2 - We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.
AB - We present the high-frequency characteristics of heterojunction bipolar transistors (HBTs) with SiGe:C base layers grown by molecular beam epitaxy (MBE). We demonstrate peak fT/fmax values up to 75/65 GHz, and delay times per stage down to 15 ps for ring oscillators with integrated SiGe:C HBTs. The use of epitaxial SiGe:C layers instead of SiGe offers wider latitude in process margin, without affecting dc performance.
UR - http://www.scopus.com/inward/record.url?scp=84886448135&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:84886448135
SP - 803
EP - 806
JO - Technical Digest - International Electron Devices Meeting, IEDM
JF - Technical Digest - International Electron Devices Meeting, IEDM
SN - 0163-1918
T2 - 1997 International Electron Devices Meeting
Y2 - 7 December 1997 through 10 December 1997
ER -